NTE NTE451 Datasheet

Silicon N–Channel JFET Transistor

Absolute Maximum Ratings:

Drain–Gate Voltage, V
Reverse Gate–Source Voltage, V
Drain Current, I

D

Total Device Dissipation (T

Derate Above 25°C 2.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DG

C

= +25°C), P

NTE451

VHF/UHF Amplifier

GSR

D

25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

350mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Gate–Source Breakdown Voltage V
Gate Reverse Current I

Gate–Source Cutoff Voltage V

ON Characteristics

Zero–Gate–Voltage Drain Current I

Small Signal Characteristics Characteristics

Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz 3500 – 7000 µmho
Input Admittance Re(yis) VDS = 15V, VGS = 0, f = 400MHz – – 1000 µmho
Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz – – 60 µmho
Output Conductance Re(yos) VDS = 15V, VGS = 0, f = 400MHz – – 100 µmho

stg

(TA = +25°C unless otherwise specified)

(BR)GSSIG

GSS

GS(off)ID

DSS

J

= –1µA, VDS = 0 –25 – – V
VGS = –20V, VDS = 0 – – –1.0 nA
VGS = –20V, VDS = 0, TA = +100°C – – –0.2 nA

= 10nA, VDS = 15V –0.5 – –4.0 V

VDS = 15V, VGS = 0 4 – 20 mA

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Forward Transconductance g
Input Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C

fs
iss
rss

oss

VDS = 15V, VGS = 0, f = 400MHz 3000 – – µmho
VDS = 15V, VGS = 0, f = 1MHz – – 5 pF
VDS = 15V, VGS = 0, f = 1MHz – – 1 pF
VDS = 15V, VGS = 0, f = 1MHz – – 2 pF

Electrical Characteristics Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Functional Characteristics

Noise Figure NF

Common Source Power Gain G

.210

(5.33)

Max

.500

(12.7)

Min

VDS = 15V, ID = 4mA,
RG  1kΩ

VDS = 15V, ID = 4mA

ps

f = 100MHz – – 2 dB
f = 400MHz – – 4 dB
f = 100MHz 18 – 30 dB
f = 400MHz 10 – 20 dB

.135 (3.45) Min

Seating Plane

.021 (.445) Dia Max

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

D S G

.050 (1.27)

.165

(4.2)

Max

.105 (2.67) Max