NTE NTE399 Datasheet
Absolute Maximum Ratings:
NTE399
Silicon NPN Transistor
High Voltage Video Amp
(Compl to NTE2366)
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CBO
CEO
EBO
Continuous 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
C
J
stg
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Current Gain–Bandwidth Product f
Output Capacitance C
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CE(sat)
BE(sat)
CBO
EBO
FE
T
ob
VCB = 200V, IE = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
VCB = 30V, IC = 10mA
VCB = 10V, f = 1MHz
IC = 20mA, IB = 2mA
IC = 20mA, IB = 2mA
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
900mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
– – 1.0
– – 1.0
100 – 220
50 – – MHz
– – 7.5 pF
– – 0.6 V
– – 1.0 V
µA
µA
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.339
(8.62)
Max
.512
(13.0)
Min
.100 (2.54)
Seating Plane
.026 (.66)
Dia Max
E C B
.240 (6.09) Max
.200
(5.08)
Max
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