NTE NTE399 Datasheet

Absolute Maximum Ratings:

NTE399

Silicon NPN Transistor

High Voltage Video Amp

(Compl to NTE2366)

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CBO

CEO

EBO

Continuous 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T

C

J

stg

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Current Gain–Bandwidth Product f
Output Capacitance C
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

CE(sat)
BE(sat)

CBO
EBO

FE

T
ob

VCB = 200V, IE = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
VCB = 30V, IC = 10mA
VCB = 10V, f = 1MHz
IC = 20mA, IB = 2mA
IC = 20mA, IB = 2mA

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

900mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

– – 1.0
– – 1.0

100 – 220

50 – – MHz

– – 7.5 pF
– – 0.6 V
– – 1.0 V

µA
µA

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

.339

(8.62)

Max

.512

(13.0)

Min

.100 (2.54)

Seating Plane

.026 (.66)
Dia Max

E C B

.240 (6.09) Max

.200

(5.08)

Max