NTE NTE398 Datasheet

NTE398

Silicon PNP Transistor

TV Vertical Output

(Compl to NTE375)

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Continuous 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed (Note 1) 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Dissipation (TC = +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T

Note 1. Pulse Width ≤ 10ms, Duty Cycle ≤ 50%.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

CBO

CEO

EBO

C

J

stg

200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

25W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Collector–Emitter Saturation Voltage V

CE(sat)IC

CBO
EBO

FE

VCB = 150V, IE = 0 – – 50 µA
VEB = 4V, IC = 0 – – 50 µA
VCE = 10V, IC = 400mA, Note 2 60 – 120
VCE = 10V, IC = 400mA, Note 2 – 5 – MHz

T

= 500A, IB = 50mA – – 1.0 V

Note 2. Pulse Width ≤ 350µs, Duty Cycle ≤ 25%/Pulsed.

.420 (10.67)

Max

.110 (2.79)

.147 (3.75)

Dia Max

.070 (1.78) Max

Base

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

Emitter

.100 (2.54)

Collector/Tab