NTE NTE398 Datasheet
NTE398
Silicon PNP Transistor
TV Vertical Output
(Compl to NTE375)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Continuous 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1) 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (TC = +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T
Note 1. Pulse Width ≤ 10ms, Duty Cycle ≤ 50%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
CBO
CEO
EBO
C
J
stg
200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Collector–Emitter Saturation Voltage V
CE(sat)IC
CBO
EBO
FE
VCB = 150V, IE = 0 – – 50 µA
VEB = 4V, IC = 0 – – 50 µA
VCE = 10V, IC = 400mA, Note 2 60 – 120
VCE = 10V, IC = 400mA, Note 2 – 5 – MHz
T
= 500A, IB = 50mA – – 1.0 V
Note 2. Pulse Width ≤ 350µs, Duty Cycle ≤ 25%/Pulsed.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.070 (1.78) Max
Base
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
.100 (2.54)
Collector/Tab
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