NTE NTE397 Datasheet
NTE397
Silicon PNP Transistor
Power Amplifier & High Speed Switch
(Compl to NTE396)
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Base Current, I
B
Total Device Dissipation (TC = +25°C), P
Derate Above 25°C 57mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
CEO
CBO
EBO
C
D
J
stg
thJC
thJA
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
350V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sust aining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
ON Characteristics
DC Current Gain h
Small–Signal Characteristics
Output Capacitance C
Input Capacitance C
Small–Signal Current Gain h
Real Part of Input Impedance Re(hie) VCE = 10V, IC = 5mA, f = 1MHz – – 300 Ω
CEO(sus)IC
CBO
EBO
FE
obo
ibo
fe
= 50mA, IB = 0, Note 1 300 – – V
VCB = 280V, IE = 0 – – 50 µA
VEB = 6V, IC = 0 – – 20 µA
IC = 50mA, VCE = 10V 30 – 120
VCB = 10V, IE = 0, f = 1MHz – – 15 pF
VCB = 5V, IC = 0, f = 1MHz – – 75 pF
IC = 10mA, VCE = 10V, f = 1MHz 25 – –
Note 1. Pulse Test; Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
CAUTION: The sustaining voltage must not be measured on a curve tracer.
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Emitter
.018 (0.45)
Base
Collector/Case
45°
.031 (.793)
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