NTE NTE396 Datasheet

NTE396

Silicon NPN Transistor

Power Amplifier & High Speed Switch

(Compl to NTE397)

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Base Current, I

B

Total Device Dissipation (TA = +25°C), P

Derate Above 25°C 5.7mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (TC = +25°C), P

Derate Above 25°C 28.6mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R

CEO

CBO

EBO

C

D

D

J

stg

thJC

thJA

350V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

35°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

175°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sust aining Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I
ON Characteristics (Note 1)
DC Current Gain h

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

CEO(sus)IC

I
I

CE(sat)IC
BE(sat)IC

CEO
CEX
CBO
EBO

FE

= 50mA, IB = 0, Note 1 350 – – V
VCE = 300V, IB = 0 – – 20 µA
VCE = 450V, VBE = 1.5V – – 500 µA
VCB = 360V, IE = 0 – – 20 µA
VEB = 6V, IC = 0 – – 20 µA

IC = 2mA, VCE = 10V 30 – –
IC = 20mA, VCE = 10V 40 – 160

= 50mA, IB = 4mA – – 0.5 V

= 50mA, IB = 4mA – – 1.3 V

Note 1. Pulse Test; Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

CAUTION: The sustaining voltage must not be measured on a curve tracer.

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Small–Signal Characteristics

Current Gain–Bandwidth Product f
Output Capacitance C
Input Capacitance C
Small–Signal Current Gain h
Real Part of Input Impedance Re(hie) VCE = 10V, IC = 5mA, f = 1MHz – – 300 Ω

T

obo

ibo

fe

IC = 10mA, VCE = 10V, f = 50MHz 15 – – MHz
VCB = 10V, IE = 0, f = 1MHz – – 10 pF
VCB = 5V, IC = 0, f = 1MHz – – 75 pF
IC = 5mA, VCE = 10V, f = 1MHz 25 – –

.370 (9.39) Dia Max

.355 (9.03) Dia Max

.260
(6.6)
Max

(12.7)

Emitter

.500

Min

.018 (0.45)

Base
Collector/Case

45°

.031 (.793)