NTE NTE395 Datasheet

NTE395

Silicon PNP Transistor

Wide Band Linear Amplifier

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Power Dissipation (TA = +25°C), P
Power Dissipation (TC = +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

CBO

CEO

EBO

tot

tot

J

stg

thJC

thJA

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

225mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

360mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

485°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

775°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector–Base Cutoff Current I
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Static Forward Current Transfer Ratio h
Base–Emitter Voltage V
Knee Voltage V
Transition Frequency f
Maximum Oscillation Frequency f VCE = 15V, IC = 10mA – 6.5 – GHz
Output Capacitance C

CBO
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

21E

BE

CEKIC

T

22b

VCB = 15V, IE = 0 – – 50 nA

= 100µA, IE = 0 30 – – V
= 5mA, IB = 0 25 – – V

= 10µA, IC = 0 3 – – V
VCE = 10V, IC = 10mA, Note 1 20 – –
VCE = 10V, IC = 10mA – 0.75 – V

= 20mA, Note 2 – 0.8 – V
VCE = 15V, IC = 10mA 1.4 2.3 – GHz

VCB = 15V, IE = 0, f = 1MHz – 1.1 – pF

Note 1. Pulsed.
Note 2. V

tested with IC = 100ma and IB = values for which IC = 110mA at VCE = 1V.

CEK

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Power Gain VCE = 15V, IC = 10mA, f = 800MHz – 10 – dB
Wide Band Power Gain G
Noise Figure NF VCE = 15V, IC = 3mA, f = 200MHz – 2.5 – dB

.190

(4.82)

f = 40 to 860MHz, RS = RL = 75Ω – 16 – dB

P

VCE = 15V, IC = 10mA, f = 800MHz – 3.5 – dB
VCE = 15V, IC = 10mA, f = 200MHz – 3.0 – dB
VCE = 15V, IC = 10mA, f = 800MHz – 4.0 – dB

.220 (5.58) Dia Max

.185 (4.7) Dia Max

.030 (.762) Max

.500

(12.7)

Min

E

.018 (0.45)

B
C

45°

Case

.040 (1.02)