NTE NTE394 Datasheet
NTE394
Silicon NPN Transistor
Power Amp, High Voltage Switch
Description:
The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use
in high voltage, fast switching applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0), V
Collector–Emitter Voltage (IB = 0), V
Emitter–Base Voltage (IC = 0), V
Collector Current, I
C
EB
CES
CEO
Continuous 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
Total Power Dissipation (TC = +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T
B
tot
J
stg
Thermal Resistance, Junction–to–Case, R
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.25°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Cutoff Current I
Emitter–Base Cutoff Current I
Collector–Emitter Sustaining Voltage V
Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
DC Current Gain h
CEO(sus)IC
CEO
I
CES
EBO
CE(sat)IC
BE(on)IC
FE
VCE = 300V, IB = 0 – – 1 mA
VCE = 500V, VEB = 0 – – 1 mA
VEB = 5V, IC = 0 – – 1 mA
= 30mA, IB = 0, Note 1 400 – – V
= 3A, IB = 0.6A, Note 1 – – 1.5 V
= 3A, VCE = 10V, Note 1 – – 1.5 V
IC = 0.3A, VCE = 10V 30 150 –
IC = 3A, VCE = 10V 10 – –
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Small–Signal Current Gain h
Second Breakdown Unclamped Energy E
Turn–On Time t
Turn–Off Time t
.600
(15.24)
C
on
off
fe
s/b
IC = 0.2A, VCE = 10V, f = 1kHz 30 – –
IC = 0.2A, VCE = 10V, f = 1MHz 2.5 – –
VBE = 20V, RBE = 100Ω, l = 30mH 100 – – mJ
IC = 1A, IB1 = 100mA, VCC = 200V – 0.2 – µs
IC = 1A, IB1 = –IB2 = 100mA,
VCC = 200V
– 0.2 – µs
.060 (1.52)
.173 (4.4)
.156
(3.96)
Dia.
BCE
.216 (5.45)
.550
(13.97)
.055 (1.4)
.430
(10.92)
.500
(12.7)
Min
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners
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