NTE NTE393 Datasheet
NTE392 (NPN) & NTE393 (PNP)
Silicon Complementary Transistors
General Purpose
Description:
The NTE392 (NPN) and NTE393 (PNP) a re s ilicon compelementary transistors i n a TO218 type package
designed for general purpose power amplifier and switching applications.
Features:
D 25A Collector Current
D Low Leakage Current: I
D Excellent DC Gain: hFE = 40 Typ @ 15A
D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 1A, f = 1MHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EB
C
Continuous 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 40A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
Total Power Dissipation (TC = +25°C), P
Derate Above 25°C 1W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Unclamped Inductive Load, E
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
= 1mA @ VCE = 60V
CEO
CEO
CB
B
D
stg
SB
J
thJC
thJA
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35.7°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector–Emitter Cutoff Current I
Emitter–Base Cutoff Current I
CEO(sus)IC
CEO
I
CES
EBO
= 30mA, IB = 0, Note 2 100 – – V
VCE = 60V, IB = 0 – – 1 mA
VCE = 100V, VEB = 0 – – 0.7 mA
VEB = 5V, IC = 0 – – 1 mA
ON Characteristics (Note 2)
DC Current Gain h
FE
IC = 1.5A, VCE = 4V 25 – –
IC = 15A, VCE = 4V 15 – 75
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 15A, IB = 1.5A – – 1.8 V
IC = 25A, IB = 5A – – 4 V
Base–Emitter ON Voltage V
BE(on)IC
= 15A, VCE = 4V – – 2.0 V
IC = 25A, VCE = 4V – – 4.0 V
Dynamic Characteristics
Small–Signal Current Gain h
Current–Gain Bandwidth Product f
fe
T
IC = 1A, VCE = 10V, f = 1kHz 25 – –
IC = 1A, VCE = 10V,
f = 1MHz, Note 3
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Note 3. fT = |hfe| f
test
3 – – MHz
.600
(15.24)
C
.156
(3.96)
Dia.
BCE
.216 (5.45)
.173 (4.4)
.550
(13.97)
.055 (1.4)
.060 (1.52)
.430
(10.92)
.500
(12.7)
Min
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners
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