NTE39
Silicon PNP Transistor
Line–Operated Series Pass/Switching Regulator
(Compl to NTE157)
Description:
The NTE39 is a silicon PNP transistor in a TO126 type package designed for use in line–operated
applications such as low power, line–operated series pass and switching regulators requiring PNP
capability.
Features:
D High Collector–Emitter Sustaining Voltage: V
D Excellent DC Current Gain: h
= 30 to 240 @ IC = 50mA
FE
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Power Dissipation (T
CEO
EB
C
= +25°C), P
C
D
Derate Above 25°C 0.16W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction to case, R
J
Θ
JC
CEO(sus)
= 300V @ IC = 1.0mA
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.25°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
ON Characteristics
DC Current Gain h
(TC = +25°C unless otherwise specified)
CEO(sus)IC
CEO
EBO
FE
VCB = 300V, IE = 0 – – 100 µA
VEB = 3V, IC = 0 – – 100 µA
IC = 50mA, VCE = 10V 30 – 240
= 1.0mA, IB = 0 300 – – V