NTE NTE389 Datasheet

NTE389

Silicon NPN Transistor

Horizontal Output

Description:

The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in
CRT horizontal deflection circuits.

Features:

D Collector–Emitter Voltage: V
D Glass Passivated Base–Collector Junction
D Forward Bias Safe Operating Area @ 50µs = 20A, 300V
D Switching Times with Inductive Loads: tf = 0.5µs (Typ) @ IC = 3A

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V

CEO
CEX

EBO

Continuous Collector Current, I
Continuous Base Current, I
Continouos Emitter Current, I
Total Power Dissipation, P

B

E

D

TC = +25°C 100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +100°C 40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above +25°C 0.8W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CEX

C

= 1500V

750V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R

J

thJC

Maximum Lead Temperature (For Soldering, 1/8” from Case for 5sec), T

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.25°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+275°C. . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics (Note 1)

Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
ON Characteristics (Note 1)
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

Dynamic Characteristics

Current Gain – Bandwidth Product f
Output Capacitance C

Switching Characteristics

Fall Time t

CEO(sus)IC

CE(sat)IC

BE(sat)IC

CES
EBO

T
ob

f

= 50mA, IB = 0 750 – – V
VCE = 1500V, VBE = 0 – – 1.0 mA
VBE = 5V, IC = 0 – – 1.0 mA

= 3A, IB = 1.2A – – 5.0 V

= 3A, IB = 1.2A – – 1.5 V

IC = 0.1A, VCE = 5V, f
VCB = 10V, IE = 0, f = 0.1MHz – 90 – pF

IC = 3A, IB1 = 1.2A, LB = 8µH – 0.5 1.0 µs

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle = 2%.

.135 (3.45) Max

.350 (8.89)

.875 (22.2)

Dia Max

= 1MHz – 4 – MHz

test

.215 (5.45)

.430

(10.92)

Emitter

Seating
Plane

.040 (1.02).312 (7.93) Min

1.187 (30.16)

.665

(16.9)

.156 (3.96) Dia
(2 Holes)

.188 (4.8) R Max

.525 (13.35) R Max

Collector/CaseBase