NTE NTE386 Datasheet
NTE386
Silicon NPN Transistor
Audio Power Amp, Switch
Description:
The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high–
speed power switching in inductive circuit where fall time is critical. This device is particularly suited
for line operated switchmode applications.
Applications:
D Switching Regulators
D Inverters
D Solenoid and Relay Drivers
D Motor Controls
D Deflection Circuits
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO(sus)
CEV
EB
Continuous 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
C
Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +100°C), P
Total Power Dissipation (TC = +25°C), P
D
D
Derate Above 25°C 1.0W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
175W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+275°C. . . . . . . . . . . . . .
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
CEO(sus)IC
CEV
I
CER
EBO
= 100mA, IB = 0 500 – – V
V
= 800V, V
CEV
= 1.5V – – 0.25 mA
EB(off)
VCE = 800V, RBE = 50Ω, TC = +1 00°C – – 5.0 mA
VBE = 6V, IC = 0 – – 1.0 mA
ON Characteristics (Note 2)
DC Current Gain h
Collector–Emitter Saturation Voltage V
FE
CE(sat)IC
VCE = 5V, IC = 5A 10 – 60
= 10A, IB = 2A – – 1.8 V
IC = 20A, IB = 6.7A – – 5.0 V
Base–Emitter Saturation Voltage V
BE(sat)IC
= 10A, IB = 2A – – 1.8 V
Dynamic Characteristics
Output Capacitance C
VCB = 10V, IE = 0, f
cb
= 1kHz 125 – 500 pF
test
Switching Characteristics (Resistive Load)
Dealy Time t
Rise Time t
Storage Time t
Fall Time t
VCC = 250V, IC = 10A, IB1 = 2A,
d
V
r
Duty Cycle ≤ 2%
Duty Cycle ≤ 2%
s
f
= 5V, tp = 10µs,
BE(off)
Note 2. Pulse Test: Pulse Width = 300ms, Duty Cycle ≤ 2%.
– 0.02 0.1 µs
– 0.3 0.7 µs
– 1.6 4.0 µs
– 0.3 0.7 µs
.350 (8.89)
.215 (5.45)
Emitter
.430
(10.92)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.040 (1.02).312 (7.93) Min
1.187
(30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
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