NTE NTE384 Datasheet

NTE384

Silicon NPN Transistor

High Voltage Power Amp/Switch

Description:

The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a
multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere character­istic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform cur­rent flow throughout the structure, which produces a high I

The NTE384 is characterized for use in inverters operating directly from a rectified 1 10V power line.
The leakage current is specified at 450V; therefore the device can also be used in a series bridge
configuration on a 220V line. The V

rating of 9V eases requirements on the drive transformer in

EBO

inverter applications.

Features:

D Maximum Safe–Area–of–Operation
D Low Saturation Voltages
D High Voltage Rating: V

CER(sus)

= 375V

D High Dissipation Rating: PT = 45W

and a large safe–operation–area.

S/b

Absolute Maximum Ratings:

Collector–Base Voltage, V

CBO

Collector–Emitter Sustaining Voltage

With Base Open, V
With Reverse Bias (VBE) of –1.5V, V

With External Base–Emitter Resistance (RBE) ≤ 50Ω, V
Emitter–Base Voltage, V
Collector Current, I

C

CEO(sus)

CEX(sus)

CER(sus)

EBO

Continuous 7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous Base Current, I
Transistor Dissipation (TC ≤ +25°C, VCE ≤ 40V), P
Operating Junction Temperature Range, T
Storage Temperature Range, T

B

T

opr

stg

Lead Temperature (During Soldering, 1/32 in. (0.8mm) from case, 10sec max), T
Thermal Resistance, Junction to Case (VCE = 20V, IC = 2.25A), R

Θ

JC

375V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

350V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

375V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

375V. . . . . . . . . . . . . . . . . . .

9V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

45W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+230°C. . . . . . .

3.9°C/W. . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Cutoff Current I

Emitter–Cutoff Current I
Collector–Emitter Sustaining Voltage V

CEO(sus)IC

V

CER(sus)IC

Emitter–Base Voltage V
DC Forward Current h
Base–Emitter Saturation Voltage V

Collector–Emitter Saturation Voltage V

BE(sat)IC

CE(sat)IC

Output Capacitance C
Small–Signal Forward Current

|hfe| VCE = 10V, IC = 200mA, f = 1MHz 1 7 –

Transfer Ratio

Second Breakdown Collector

Current

Second Breakdown Energy E

Delay Time t
Rise Time t
Storage Time t
Fall Time t

CEV

EBO

EBOIC

FE

obo

I

S/b

S/b

d

r

s

f

VCE = 450V, VBE = –1.5V – – 0.5 mA
VCE = 450V, VBE = –1.5V, TC = +1 25°C – – 5.0 mA
VBE = –9V, IC = 0 – – 1.0 mA

= 200mA, Note 1, Note 2 350 – – V

= 200mA, RBE = 50Ω, Note 1, Note 2 375 – – V

= 0 9 – – V

VCE = 1V, IC = 1.2A, Note 1 12 28 50

= 1.2A, IB = 200mA, Note 1 – 1.0 1.6 V

IC = 4A, IB = 800mA, Note 1 – 1.3 2.0 V

= 1.2A, IB = 200mA, Note 1 – 0.15 0.5 V
IC = 4A, IB = 800mA, Note 1 – 0.5 3.0 V
VCB = 10V, f = 1MHz – – 150 pF

VCE = 50V, with Base forward biased,

0.9 – – A

Pulse duration (non–repetitive) = 1sec
VBE = –4V, IC = 3A, with Base reverse

0.45 – – mj

biased, RB = 50Ω, L = 100µH
VCC = 250V,

IB1 = IB2 = 200mA,
I = 1.2A

IC = 1.2A

– 0.02 – µs
– 0.3 0.75 µs
– 2.8 5.0 µs
– 0.3 0.75 µs

Note 1. Pulsed: Pulse Duration ≤ 350µs, Duty Factor = 2%.

.485 (12.3)

Dia

.062 (1.57)

.031 (0.78) Dia

.960 (24.3) Base

.580 (14.7)

.147 (3.75) Dia
(2 Places)

.145 (3.7) R Max

.360 (9.14)

Min

EmitterCollector/Case

.295 (7.5)

.200

(5.08)