NTE NTE382, NTE383 Datasheet

NTE382 (NPN) & NTE383 (PNP)

Silicon Complementary Transistors

Audio Frequency Driver

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Continuous 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T

CBO

CEO

EBO

C

J

stg

120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

900mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
DC Current Gain h

Collector–Emitter Saturation Voltage V
Base–Emitter Voltage V
Current Gain–Bandwidth Product f
Capacitance C

(TA = +25°C unless otherwise specified)

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

CBO

FE

CE(sat)IC

BE

T
ob

VCB = 100V, IE = 0 – – 10 µA
VCE = 5V, IC = 150mA 160 – 320
VCE = 5V, IC = 500mA 30 – –

VCE = 5V, IC = 150mA – – 1.5 V
VCE = 5V, IC = 150mA – 140 – MHz
VCB = 10V, IE = 0, f = 1MHz – 20 – pF

= 10µA, IE = 0 120 – – V
= 1mA, RBE = ∞ 100 – – V
= 10µA, IC = 0 5 – – V

= 500mA, IB = 50mA – – 1.0 V

.343

(8.73)

Max

.492

(12.5)

Min

.102 (2.6) Max

.024 (0.62) Max

E C B

.059 (1.5) Typ

.102 (2.6) Max

.018 (0.48)

.118 (3.0) Max

.236 (6.0)Dia Max

.197

(5.0)

.102 (2.6) Max

.102 (2.6) Max