NTE NTE379 Datasheet

NTE379

Silicon NPN Transistor

Power Amp, High Voltage, Switch

Description:

The NTE379 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–
speed power switching inductive circuits where fall time is critical. This device is particularly suited
for 115 and 220V switch–mode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers, and Deflection circuits.

Features:

D V

CEO(sus)

D Reverse Bias SOA with Inductive Loads @ TC = +100°C
D 700V Blocking Capability

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 24A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

Continuous 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter Current, I

Continuous 18A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 36A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (TA = +25°C), P

Derate Above 25°C 16mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (TC = +25°C), P

Derate Above 25°C 800mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction to Case, R
Thermal Resistance, Junction to Ambient, R
Lead Temperature (During Soldering, 1/8” from case for 5sec), T

= 400V

C

B

E

EBO

CEO(sus)
CEV

stg

D

D

J

thJC

thJA

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

9V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.25°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+275°C. . . . . . . . . . . . . . . . . . . . .

Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics (Note 2)

Collector–Emitter Sustaining Voltage V

CEO(sus)IC

Collector Cutoff Current I

Emitter Cutoff Current I
ON Characteristics (Note 2)
DC Current Gain h

Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

CE(sat)IC

BE(sat)IC

Dynamic Characteristics

Current Gain–Bandwidth Product f
Output Capacitance C

Switching Characteristics

CEV

EBO

FE

T
ob

= 10mA, IB = 0 400 – – V

V

= 700V, V

CEV

V

= 700V, V

CEV

= +100°C

T

C

= 1.5V – – 1 mA

BE(off)
BE(off)

= 1.5V,

– – 5 mA

VEB = 9V, IC = 0 – – 1 mA

IC = 5A, VCE = 5V 8 – 40
IC = 8A, VCE = 5V 6 – 30

= 5A, IB = 1A – – 1.0 V
IC = 8A, IB = 1.6A – – 1.5 V
IC = 12A, IB = 3A – – 3.0 V
IC = 8A, IB = 1.6A, TC = +100°C – – 2.0 V

= 5A, IB = 1A – – 1.2 V
IC = 8A, IB = 1.6A – – 1.6 V
IC = 8A, IB = 1.6A, TC = +100°C – – 1.5 V

IC = 500mA, VCE = 10V, f = 1MHz 4 – – MHz
VCB = 10V, IE = 0, f = 0.1MHz – 180 – pF

Resistive Load
Delay Time t
Rise Time t
Storage Tme t
Fall Time t

d

VCC = 125V, IC = 8A,

r

IB1 = IB2 = 1.6A, tp = 25µs,

s

Duty Cycle ≤ 1%

Duty Cycle ≤ 1%

f

Inductive Load, Clamped
Voltage Storage Time t
Crossover Time t

sv

c

IC = 8A, V

IC = 8A, V
V

= 5V, TC = +100°C

BE(off)

= 300V, IB1 = 1.6A,

= 300V, IB1 = 1.6A,

clamp

clamp

Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.

– 0.06 0.1 µs
– 0.45 1.0 µs
– 1.3 3.0 µs
– 0.2 0.7 µs

– 0.92 2.3 µs
– 0.12 0.7 µs