NTE NTE378, NTE377 Datasheet

NTE377 (NPN) & NTE378 (PNP)
Silicon Complementary Transistors
Power Amp Driver, Output, Switch
Description:
The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type pack­age designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
Features:
CE(sat)
D Fast Switching Speeds D Complementary Pairs Simplifies Designs
Absolute Maximum Ratings:
Collector–Emitter Voltage, V Emitter–Base Voltage, V Collector Current, I
C
CEO
EB
Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, P
D
TC = +25°C 50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TA = +25°C 1.67W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R Thermal Resistance, Junction–to–Ambient, R
J
Θ
JC
Θ
JA
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
= 1V Max @ 8A
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
+275°C. . . . . . . . . . . . . .
Note 1. Pulse Width 6ms, Duty Cycle ≤ 50%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector Cutoff Current I Emitter Cutoff Current I
CES EBO
VCE = 80V, VBE = 0 10 µA VEB = 5V 100 µA
ON Characteristics
DC Current Gain h
FE
VCE = 1V, IC = 2A, TJ = +25°C 60
VCE = 1V, IC = 4A, TJ = +25°C 40 Collector–Emitter Saturation Voltage V Base–Emitter Saturation Voltage V
CE(sat)IC BE(sat)IC
= 8A, IB = 400mA 1.0 V = 8A, Ib = 800mA 1.5 V
Dynamic Characteristics
Collector Capacitance
NTE377
C
cb
VCB = 10V, f
= 1MHz 130 pF
test
NTE378 230 pF
Gain Bandwidth Product
NTE377
f
T
IC = 500mA, VCE = 10V, f = 20MHz 50 MHz
NTE378 40 MHz
Switching Times
Delay and Rise Time
NTE377
td + t
r
IC = 5A, IB1 = 500mA 300 ns
NTE378 135 ns Storage Time t Fall Time
NTE377
IC = 5A, IB1 = IB2 = 500mA 500 ns
s
t
f
140 ns
NTE378 100 ns
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.070 (1.78) Max
Base
.100 (2.54) Collector/Tab
.500 (12.7)
.250
(6.35)
Max
.500 (12.7)
Emitter
Max
Min
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