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NTE376
Silicon NPN Transistor
TV Power Supply Driver/Audio Output
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
CBO
CEO
EBO
C
j
–45° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
Collector–Base Current I
Collector–Emitter Current I
DC Current Gain h
Collector–Emitter Saturation Voltage V
CE(sat)IC
Base–Emitter Voltage V
Current Gain–Bandwidth Product f
Collector–Base Capacitance C
CBO
CEO
FE
BE
T
ob
= 100µA, IE = 0 300 – – V
= 5mA, RBE = ∞ 300 – – V
= 100µA, IC = 0 5 – – V
VCB = 250V, IE = 0 – – 0.1 µA
VCE = 250V, RBE = ∞ – – 2 µA
VCE = 10V, IC = 50mA 40 – 200 –
= 100mA, IB = 10mA – 0.32 1.5 V
VCE = 10V, IC = 50mA – 0.66 0.9 V
V
= 20V, IC = 30mA 60 70 – MHz
CE
VCB = 50V, IE = 0, f = 1MHz – 6.2 8 pF