NTE NTE376 Datasheet

NTE376
Silicon NPN Transistor
TV Power Supply Driver/Audio Output
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V Collector–Emitter Voltage, V Emitter–Base Voltage, V Collector Current, I
C
Power Dissipation, P Operating Junction Temperature, T Storage Temperature Range, T
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
CBO
CEO
EBO
C
j
–45° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Breakdown Voltage V Collector–Emitter Breakdown Voltage V Emitter–Base Breakdown Voltage V
(BR)CBOIC (BR)CEOIC (BR)EBOIE
Collector–Base Current I Collector–Emitter Current I DC Current Gain h Collector–Emitter Saturation Voltage V
CE(sat)IC
Base–Emitter Voltage V Current Gain–Bandwidth Product f Collector–Base Capacitance C
CBO CEO
FE
BE
T ob
= 100µA, IE = 0 300 V = 5mA, RBE = 300 V
= 100µA, IC = 0 5 V VCB = 250V, IE = 0 0.1 µA VCE = 250V, RBE = 2 µA VCE = 10V, IC = 50mA 40 200
= 100mA, IB = 10mA 0.32 1.5 V VCE = 10V, IC = 50mA 0.66 0.9 V V
= 20V, IC = 30mA 60 70 MHz
CE
VCB = 50V, IE = 0, f = 1MHz 6.2 8 pF
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.070 (1.78) Max
Base
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
.100 (2.54)
Collector/Tab
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