NTE NTE369 Datasheet

NTE369

Silicon NPN Transistor

TV Vertical Deflection, Switch

Description:

The NTE369 is an NPN transistor in a TO66 type case designed for high voltage inverters, converters,
regulators, and switching circuits.

Features:

D High Voltage: V
D Gain Specified to 200mA

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, V

Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I

B

Total Device Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R

CBO

C

= 800V

CEO

CBO

EBO

D

stg

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

J

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJC

3.12°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I

ON Characteristics

DC Current Gain h
Collector–Emitter Saturation Voltage V

Dynamic Characteristics

Current Gain–Bandwidth Product f

(BR)CEOIC

CE(sat)IC

CBO
EBO

FE

T

= 10mA, IB = 0 400 – – V
VCB = 800V – – 100
VEB = 6V, IC = 0 – – 100 mA

IC = 200mA, VCE = 10V 30 – –

= 500mA, IB = 50mA – – 5 V

IE = –100mA, VCE = 10V, f = 1MHz – 7 – MHz

mA

.062 (1.57)

.485 (12.3)

Dia

.295 (7.5)

.147 (3.75) Dia
(2 Places)

.145 (3.7) R Max

.031 (0.78) Dia

.960 (24.3) Base

.580 (14.7)

.360

(9.14)

Min

.200

(5.08)

EmitterCollector/Case