NTE NTE368 Datasheet

NTE368

Silicon NPN Transistor

RF Power Output

PO = 60W @ 512MHz

Description:

The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.

Features:

D Specified 12.5 Volt, 470MHz Characteristic:

Output Power = 60 Watts
Minimum Gain = 4.4dB
Efficiency = 55%

D Characterized with Series Equivalent Large–Signal Impedance Parameters
D Built–In Matching Network for Broadband Operation
D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–volt High Line

and Overdrive

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current–Continuous, I
Total Device Dissipation (TC = +25°C), P

CEO

CBO

EBO

C

D

Derate above 25°C 1.0W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

thJC

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V

V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

(BR)CEOIC
(BR)CESIC
(BR)EBOIE

CES

= 50mA, IB = 0 16 – – V
= 50mA, VBE = 0 36 – – V
= 5mA, IC = 0 4 – – V

VCE = 15V, VBE = 0, TC = +25°C – – 15 mA

16V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

11A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

175W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

FE

VCE = 5V, IC = 6A 20 70 150

Dynamic Characteristics

Output Capacitance C

VCB = 12.5V, IE = 0, f = 1MHz – 130 150 pF

ob

Functional Test

Common–Emitter Amplifier Power Gain G
Input Power P

PE

in

P

= 60W, VCC = 12.5V, f = 470MHz

OUT

4.4 5.0 – dB
– 19 22 W

Collector Efficiency η 55 60 – %
Output Mismatch Stress ψ VCC = 16V, Pin = 26W, f = 470MHz,

VSWR = 20:1, All Phase Angles

No Degradation in

Output Power

Note 1. y = Mismatch stress factor – the electrical criterion established to verify the device resistance

to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture
terminated in a 20:1 minimum load mismatch at all phase angles.

.205 (5.18)

EB

.405

(10.3)

Min

.215 (5.48)

.122 (3.1) Dia

.160 (4.06)

CE

.155 (3.94)

.500 (12.7) Dia

.005 (0.15)

.270

(6.85)

.725 (18.43)
.975 (24.78)