NTE NTE367 Datasheet

NTE367

Silicon NPN Transistor

RF Power Amplifier

PO = 45W @ 512MHz

Description:

The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF
large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.

Features:

D Specified 12.5V, 470MHz Characteristics:

Output Power: 45W
Minimum Gain: 4.8dB
Efficiency: 55%

D Characterized with Series Equivalent Large–Signal Impedance Parameters
D Built–In Matching Network for Broadband Operation
D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16V High Line and

50% Overdrive

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I

CEO

CBO

EBO

C

Total Device Dissipation (TC = +25°C), P

Derate Above 25°C 670mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

stg

Thermal Resistance, Junction to Case, R

D

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Θ

JC

16V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

117W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V

V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

(BR)CEOIC
(BR)CESIC

(BR)EBOIE

CES

= 20mA, IB = 0 16 – – V
= 20mA, VBE= 0 36 – – V
= 5mA, IC – 0 4 – – V

VCE = 15V, VBE = 0, TC = +25°C – – 10 mA

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

FE

IC = 4A, VCE = 5V 20 70 150

Dynamic Characteristics

Output Capacitance C

VCB = 12.5V, IE = 0, f = 1MHz – 90 125 pF

ob

Functional Tests

Common–Emitter Amplifier Power Gain G
Collector Efficiency η
Input Power P

VCC = 12.5V, PO = 45W,

pe

IC(Max) = 5.8A, f = 470MHz
VCC = 12.5V, PO = 45W,

in

4.8 5.4 – dB
55 60 – %

– 13 15 W

f = 470MHz

Load Mismatch Stress

y

VCC = 16V, f = 470MHz,
VSWR = 20:1, All Phase Angles,

No Degradation in

Output Power

Note 1, Note 2
Series Equivalent Input Impedance Z
Series Equivalent Output Impedance Z

in

OL

VCC = 12.5V, PO = 45W,

f = 470MHz

– 1.4+j4.0 – Ω
– 1.2+j2.8 – Ω

Note 1. Pin = 150% of Drive Requirement for 45W output @ 12.5V.
Note 2. y = Mismatch stress factor – the electrical criterion established to verify the device resistance

to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture
terminated in a 20:1 minimum load mismatch at all phase angles.

.405

(10.3)

Min

.500 (12.7) Dia

.005 (0.15)

.205 (5.18)

EB

.215 (5.48)

.122 (3.1) Dia

CE

.155 (3.94)

.270

(6.85)

.160 (4.06)

.725 (18.43)
.975 (24.78)