NTE NTE365 Datasheet

NTE365

Silicon NPN Transistor

RF Power Output

PO = 15W @ 512MHz

Description:

The NTE365 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.

Features:

D Specified 12.5 Volt, 470MHz Characteristic:

Output Power = 15 Watts
Minimum Gain = 7.8dB
Efficiency = 55%

D Characterized with Series Equivalent Large–Signal Impedance Parameters
D Built–In Matching Network for Broadband Operation
D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–volt High Line

and Overdrive

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current–Continuous, I
Total Device Dissipation (TC = +25°C), P

CEO

CBO

EBO

C

D

Derate above 25°C 250mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

thJC

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V

V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

(BR)CEOIC
(BR)CESIC
(BR)EBOIE

CES

= 20mA, IB = 0 16 – – V
= 20mA, VBE = 0 36 – – V
= 5mA, IC = 0 4 – – V

VCE = 15V, VBE = 0, TC = +25°C – – 5.0 mA

16V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

Dynamic Characteristics

Output Capacitance C

Functional Test

Common–Emitter Amplifier Power Gain G
Collector Efficiency η P
Output Mismatch Stress ψ VCC = 16V, Pin = 3W, f = 470MHz,

FE

.205 (5.18)

VCE = 5V, IC = 1A 30 70 150

VCB = 12.5V, IE = 0, f = 1MHz – 40 60 pF

ob

P

PE

= 15W, VCC = 12.5V, f = 470MHz 7.8 8.5 – dB

OUT

= 15W, VCC = 12.5V, f = 470MHz 55 60 – %

OUT

VSWR = 20:1, All Phase Angles

.215 (5.48)

EB

.405

(10.3)

Min

No Degradation in

Output Power

.122 (3.1) Dia

.160 (4.06)

CE

.155 (3.94)

.500 (12.7) Dia

.005 (0.15)

.270

(6.85)

.725 (18.43)
.975 (24.78)