NTE NTE363 Datasheet

NTE363

Silicon NPN Transistor

RF Power Amp, PO = 4W

Description:

The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF commu­nications.

Features:

D Designed for UHF Military and Commercial Equipment
D 4W (Min) with Greater than 8dB Gain
D Withstands Infinite VSWR Under Operating Conditions
D Low Inductance Stripline Package
D Emitter Stabilized

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Maximum Collector Current, I
Total Device Dissipation (TC = +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T

CBO

CEO

EBO

C

T

J

stg

Thermal Resistance, Junction–to–Case, R

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJC

36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

16V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

800mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

15W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

11.6°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Emiter Breakdown Voltage V

Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
DC Current Gain h

(BR)CEOIC

V

(BR)CESIC
(BR)EBOIE

CBO

FE

Note 1. Pulsed throught 25MH inductor.

= 100mA, IB = 0, Note 1 16 – – V
= 100mA, IBE = 0, Note 1 36 – – V

= 2mA, IC = 0 4 – – V
VCB = 5V, IE = 0 – – 1.0 mA
VCE = 5V, IC = 200mA 20 – –

Electrical Characteristics (Cont’d):

Parameter Symbol Test Conditions Min Typ Max Unit

RF Characteristics, Small–Signal

Output Capacitance C
Input Capacitance C

RF Characteristics, Large–Signal

Amplifier Power Out P
Amplifier Power Gain P

Input Impedance Z
Output Impedance Z

E

ob

ib

O
g

in

out

VCB = 12.5V, IC = 0 – – 25 pF
VEB = 500mV, IC = 0 – 60 – pF

470MHz/12.5V 4 – – W

8 – – dB

2.0 + J.96 Ω

6.0 – J3.4 Ω

B

.225 (5.72)

E

.530

(13.46)

C

.063 (1.62)

.005 (0.15)

8–32 NC–3A

.282 (7.17)
Dia

Seating
Plane

Wrench Flat

.250 (6.35) Dia

.123 (3.12)

.630

(16.0)