NTE NTE361 Datasheet

NTE361

Silicon NPN Transistor

RF Power Output

PO = 2W @ 512MHz

Description:

The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.

Features:

D Specified 12.5 Volt, 470MHz Characteristics:

Output Power = 2.0 Watts
Minimum Gain = 8.0dB
Efficiency = 50%

D Characterized with Series Equivalent Large–Signal Impedance Parameters
D Grounded Emitter TO39 Package for High Gain and Excellent Heat Dissipation
D Replaces Medium–Power Stud Mounted Devices

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V

CBO

EBO

Collector Current–Continuous, I
Total Device Dissipation @ TC = 25°C, P

16V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CEO

C

D

Derate Above 25°C 46mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

stg

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V

V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

(BR)CEOIC
(BR)CESIC
(BR)EBOIE

CBO

= 50mA, IB = 0 16 – – V
= 50mA, VBE = 0 36 – – V
= 1mA, IC = 0 4 – – V

VCB = 15V, IE = 0 – – 1.0 mA

36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

Dynamic Characteristics

Output Capacitance C

Functional Test

Common–Emitter Amplifier Power Gain G
Collector Efficiency η P

FE

ob

PE

.260 (6.6)

Max

VCE = 5V, IC = 100mA 20 – 200

VCB = 12.5V, IE = 0, f = 1MHz – – 15 pF

P

= 2W, VCC = 12.5V, f = 470MHz 8.0 – – dB

OUT

= 2W, VCC = 12.5V, f = 470MHz 50 – – %

OUT

.370 (9.39) Dia Max

.355 (9.03) Dia Max

.500 (12.7)

Min

Collector

.018 (0.45) Dia

Base

Emitter/Case

45°

.031 (.793)