NTE NTE37, NTE36 Datasheet
NTE36 (NPN) & NTE37 (PNP)
Silicon Complementary Transistors
AF Power Amplifier, High Current Switch
Description:
The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case designed for AF power amplifier and high current switching applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CEO
CBO
Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
= +25°C), P
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Output Capacitance
NTE36
NTE37
stg
(TA = +25°C unless otherwise specified)
J
CEO
EBO
FE1
h
FE2
C
T
ob
D
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 80V, IE = 0 – – 0.1 mA
VBE = 4V, IC = 0 – – 0.1 mA
VCE = 5V, IC = 1A 60 – 200
VCE = 5V, IC = 6A 20 – –
VCE = 5V, IC = 1A – 15 – MHz
VCB = 10V, f = 1MHz
–
210
–
300
–
–
140V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
160V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
pF
Base–Emitter Voltage V
Collector–Emitter Saturation Voltage
NTE36
NTE37
V
CE(sat)IC
BE
VCE = 5V, IC = 1A – – 1.5 V
= 5A, IB = 500mA
–
0.6
–
1.1
2.5
–
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
(BR)CBOIC
(BR)CEOIC
= 5mA, IE = 0 160 – – V
= 5mA, RBE = ∞ 140 – – V
IC = 50mA, RBE = ∞ 140 – – V
Emitter–Base Breakdown Voltage V
Turn–On Time
NTE36
NTE37
Fall Time
NTE36
NTE37
Storage Time
NTE36
NTE37
(BR)EBOIE
t
on
t
f
t
on
= 5mA, IC = 0 6 – – V
10IB1 = –10IB2 = IC = 1A,
PW = 20µs
–
–
–
–
–
–
0.26
0.25––
0.68
0.53––
6.88
1.61––
µs
µs
µs
Note 1. Matched complementary pairs are available upon request (NTE37MCP). Matched comple-
mentary pairs have their gain specification (h
) matched to within 10% of each other.
FE
.190 (4.82)
.787
(20.0)
.591
(15.02)
.787
(20.0)
.615 (15.62)
BCE
.215 (5.47)
.126
(3.22)
Dia
OR
(Note)
.217
(5.5)
Max
.130 (3.3)
Dia
BCE
.215 (5.47) .025 (0.65)
.197 (5.0).670 (17.0)
.866
(22.0)
.590
(15.0)
.177 (4.5)
.747
(19.0)
Min
NOTE: Either case style may be shipped depending on stock.
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