NTE NTE352 Datasheet
NTE352
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V
VHF large–signal power amplifier applications required in commercial and industrial FM equipment
to 175MHz.
Features:
D Specified 12.5V, 175MHz Characteristics:
Output Power = 75W
Minimum Gain = 7.0dB
Efficiency = 55%
D Characterized with Series Equivalent large–Signal Impedance Parameters
D Internal Matching Network Optimized for Minimum Gain Frequency Slope Response over the
Range 136 to 175MHz
D Load Mismatch capability at Rated P
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current (Peak), I
CEO
CBO
EBO
C
Total Device Dissipation (Note 1, TC = +25°C), P
Derate Above 25°C 1.43mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
Thermal Resuistance, Junction–to–Case (Note 2), R
and Supply Voltage
OUT
D
thJC
18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.7°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Note 2. Therma l Resistan ce is dete rmined under specified RF operating conditions by infrared
measurement techniques.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
ON Characteristics
DC Current Gain h
(BR)CEOIC
V
(BR)CESIC
(BR)EBOIE
FE
= 100mA, IB = 0 18 – – V
= 50mA, VBE = 0 36 – – V
= 10mA, IC = 0 4 – – V
IC = 5A, VCE = 5V 10 75 150
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Characteristics
Output Capacitance C
Functional Tests (VCC = 12.5V unless otherwise specified)
Common–Emitter Amplifier
Power Gain
Collector Efficiency η P
Load Mismatch P
ob
G
PE
VCB = 15V, IE = 0, f = 0.1MHz – 235 300 pF
P
= 75W, f = 175MHz 7.0 8.5 – dB
out
= 75W, f = 175MHz 55 60 – %
out
= 75W, f = 175MHz,
out
V
= 30:1, All Phase Angles
SWR
.205 (5.18)
EB
.405
(10.3)
Min
No Degradation in
Output Power
.215 (5.48)
.122 (3.1) Dia
.160 (4.06)
CE
.155 (3.94)
.500 (12.7) Dia
.005 (0.15)
.270
(6.85)
.725 (18.43)
.975 (24.78)
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