NTE NTE350 Datasheet
NTE350
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE350 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V
VHF large–signal power amplifier applications required in commercial and industrial equipment to
300MHz.
Features:
D Specified 12.5V, 175MHz Characteristics:
Output Power = 15W
Minimum Gain = 6.3dB
Efficiency = 60%
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
CEO
CES
EBO
C
Total Device Dissipation (Note 1, T
Derate Above 25°C 177mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
= +25°C), P
C
D
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
31W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
ON Characteristics
DC Current Gain h
(TC = +25°C unless otherwise specified)
(BR)CEOIC
V
(BR)CESIC
(BR)EBOIE
CBO
I
CES
FE
= 20mA, IB = 0 18 – – V
= 10mA, VBE = 0 36 – – V
= 1mA, IC = 0 4 – – V
VCB = 15V, IE = 0 – – 0.5 mA
VCE = 15V, VBE = 0, TC = +55°C – – 8 mA
IC = 500mA, VCE = 5V 5 – –
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Characteristics
Output Capacitance C
ob
VCB = 15V, IE = 0, f = 0.1MHz – 70 85 pF
Functional Tests (VCC = 12.5V unless otherwise specified)
Common–Emitter Amplifier
G
PE
P
= 15W, f = 175MHz 6.3 – – dB
out
Power Gain
Collector Efficiency η P
= 15W, f = 175MHz 60 – – %
out
1.040 (26.4) Max
.520 (13.2)
C
.230
(5.84)
EE
.100 (2.54)
8–32–NC–3A
Wrench Flat
B
.385 (9.8)
Dia
.005 (0.15)
.168 (4.27)
.750
(19.05)
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