NTE NTE349 Datasheet

NTE349

Silicon NPN Transistor

RF Power Amp, Driver

Description:

The NTE349 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V
VHF large–signal amplifier applications required in military and industrial equipment to 240MHz.

Features:

D Specified 13.6V, 175MHz Characteristics:

Output Power = 10W
Minimum Gain = 5.2dB
Efficiency = 50%

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T

CEO

CB

EB

C

= +25°C), P

C

D

Derate Above 25°C 0171mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

J

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

ON Characteristics

DC Current Gain h

Dynamic Characteristics

Output Capacitance C

(TC = +25°C unless otherwise specified)

(BR)CEOIC
(BR)EBOIE

CBO

FE

ob

VCB = 15V, IE = 0 – – 1.0 mA

IC = 250mA, VCE = 5V 5 – –

VCB = 15V, IE = 0, f = 0.1 to 1MHz – 35 70 pF

= 200mA, IB = 0 18 – – V
= 2.5mA, IC = 0 4 – – V

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Functional Tests (VCE = 13.6V unless otherwise specified)

Common–Emitter Amplifier

G

Power Gain
Power Input P
Collector Efficiency

.520 (13.2)

.230

(5.84)

EE

P

PE

in

η

= 10W, f = 175MHz 5.2 – – dB

out

P

= 10W, f = 175MHz – – 3 W

OUT

P

= 10W, f = 175MHz 50 – – %

out

1.040 (26.4) Max

C

.100 (2.54)

8–32–NC–3A

Wrench Flat

B

.385 (9.8)

Dia

.005 (0.15)

.168 (4.27)

.750

(19.05)