NTE NTE346 Datasheet

NTE346

Silicon NPN Transistor

RF Power Transistor

Description:

The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency mul­tiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver
or pre–driver stages, in VHF and UHF equipment.

Features:

D Current–Gain–Bandwidth Product–fT = 500MHz (Min) @ IC = 50mAdc
D Power Gain–G
D 1 Watt Minimum Power Output @ f = 175MHz
D Multiple–Emitter Construction for Excellent High–Frequency Performance

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current–Continuous, I
Base Current–Continuous. I

Total Device Dissipation (TA = +25°C), PD 1.0W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate above 25°C 5.71mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

Derate above 25°C 20mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

= 10dB (Min) @ VCE =12Vdc

pe

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CEO

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CB

2.0V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

EB

400mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

400mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

B

= +25°C), PD 3.5Wa. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage

Collector Cutoff Current I

Emitter Cutoff Current I

: (TC = +25°C unless otherwise specified)

V

CEO(sus)IC

V

CER(sus)IC

CEO

I

CEV

EBO

= 5mA, IB = 0 20 – – V

= 5mA, RBE = 10Ω 40 – – V
VCE = 12V, IB = 0 – – 0.02 mA
VCE = 40V, VBE = –1.5V – – 0.1 mA
VCE = 12V, VBE = –1.5V, TC = +150°C – – 5.0 mA
VEB = 2V, IC = 0 – – 0.1 mA

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

Collector–Emitter Saturation Voltage V

Dynamic Characteristics

Current–Gain Bandwidth Product f
Output Capacitance C

Functional Test

Power Input P
Collector Efficiency η
Common–Emitter Amplifier Power Gain G

CE(sat)IC

FE

T
ob

pe

IC = 100mA, VCE = 5V 10 – 200
IC = 360mA, VCE = 5V 5 – –

= 100mA, IB = 20mA – – 0.5 V

IC = 50mA, VCE = 15V, f = 1MHz 500 – – MHz
VCB = 12V, IE = 0, f = 1MHz – – 4 pF

P

in

= 1W, ZS = 50Ω, VCC = 12V,

out

f = 175MHz
Pin = 100mW, ZS = 50Ω, VCC = 12V,

f = 175MHz

– – 100 W
50 – – %
10 – – dB

.370 (9.39) Dia Max

.355 (9.03) Dia Max

.260 (6.6)

Max

.500 (12.7)

Min

E

45°

.018 (0.45) Dia

B
C/Case

.031 (.793)