NTE NTE342 Datasheet
NTE342
Silicon NPN Transistor
RF Power Output
(PO = 6W, 175MHz)
Description:
The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF
band mobile radio applications.
Features
D High Power Gain: G
:
≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
pe
D Ability to Withstand more than 20:1 VSWR Load when Operated at:
= 15.2V, PO = 6W, f = 175MHz
V
CC
Application:
D 4 to 5 Watt Output Power Amplifiers Applications in VHF band
Absolute Maximum Ratings
Collector–Base Voltage, V
Collector–Emitter Voltage (R
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation, P
C
C
: (TC = +25°C unless otherwise specified)
CBO
= ∞), V
BE
EBO
CEO
TA = +25°C 1.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C 12.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
J
stg
thJA
thJC
35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
83°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Breakdown Voltage
Symbol Test Conditions Min Typ Max Unit
V
(BR)EBOIE
= 5mA, IC = 0 4 – – V
Emitter to Base
Breakdown Voltage
V
(BR)CBOIC
= 10mA, IE = 0 35 – – V
Collector to Base
Breakdown Voltage
V
(BR)CEOIC
= 50mA, RBE = ∞ 17 – – V
Collector to Emitter
Collector Cutoff Current I
Emitter Cutoff Current I
CBO
EBO
DC Forward Current Gain h
Output Power P
FE
O
VCB = 25V, IE = 0 – – 500 µA
VEB = 3V, IC = 0 – – 500 µA
VCE = 10V, IC = 100mA, Note 1 10 50 180 –
VCC = 13.5V, Pin = 600mW,
f = 175MHz
Collector Efficiency η
C
Note 1. Pulse Test: Pulse Width = 150µs, Duty Cycle = 5%.
6 7 – W
60 70 – %
.051 (1.3).358 (9.1)
.126 (3.2)
.485
(12.32)
.485
(12.32)
Min
.100 (2.54) .019 (0.48)
E
BE C
.177 (4.5)
.142 (3.62) Dia
.395
(9.05)
.189
(4.8)
.347 (9.5) .122 (3.1)
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