NTE NTE340 Datasheet
NTE340
Silicon NPN Transistor
RF Power Output, High Frequency
Features:
D High Transition Frequency
D Output of 0.6W can be obtained in the VHF Band (f = 175MHz).
Absolute Maximum Ratings
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Peak Collector Voltage, I
Collector Current, I
0.3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
DC Current Gain h
Transition Frequency f
Collector Output Capacitance C
High–Frequency Output P
Overall Efficiency η VCC = 13.5V, PI = 0.03W, f = 175MHz – 60 – %
: (TA = +25°C unless otherwise specified)
36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
16V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
0.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CP
1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
j
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
: (TA = +25°C unless otherwise specified)
CBO
FE
VCB = 20V, IE = 0 – – 10 µA
VCE = 13.5V, IC = 100mA 20 50 – –
VCB = 10V, IE = –100mA, f = 200MHz 1.5 2 – GHz
T
VCB = 10V, IE = 0, f = 1MHz – 4 8 pF
ob
VCC = 13.5V, PI = 0.03W, f = 175MHz 0.6 0.9 – W
O
.339
(8.62)
Max
.512
(13.0)
Min
.100 (2.54)
Seating Plane
.026 (.66)
Dia Max
E C B
.240 (6.09) Max
.200
(5.08)
Max
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