NTE NTE337 Datasheet

NTE337

Silicon NPN Transistor

RF Power Amp, Driver

Description:

The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large–
signal amplifier driver and pre–driver stages. This device is intended for use in industrial communica­tions equipment operating at frequencies to 80MHz.

Features:

D Specified 12.5V, 50MHz Characteristics:

Output Power = 8W
Minimum Gain = 10dB
Efficiency = 50%

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T

CEO

CB

EB

C

= +25°C), P

C

D

Derate Above 25°C 114W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

J

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V

Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

ON Characteristics

DC Current Gain h

(TC = +25°C unless otherwise specified)

(BR)CEOIC

V

(BR)CESIC
(BR)EBOIE

CES

I

CBO

FE

= 200mA, IB = 0, Note 1 18 – – V
= 50mA, VBE = 0, Note 1 36 – – V

= 5mA, IC = 0 4 – – V
VCE = 15V, VBE = 0, TC = +125°C – – 10 mA
VCB = 15V, IE = 0 – – 1 mA

IC = 500mA, VCE = 5V 5 – –

Note 1. Pulsed through a 25mH inductor.

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Dynamic Characteristics

Output Capacitance C

ob

VCB = 15V, IE = 0, f = 0.1 to 1MHz – – 90 pF

Parameter UnitMaxTypMinTest ConditionsSymbol

Functional Tests (VCC = 12.5V unless otherwise specified)

Common–Emitter Amplifier

G

PE

Power Gain

Power Output P

out

Collector Efficiency h P

.520 (13.2)

.230

(5.84)

EE

P

= 8W, f = 50MHz 10 – – dB

out

Pin = 800mW, f = 50MHz 8 – – W

= 8W, f = 50MHz 50 – – %

out

1.040 (26.4) Max

C

.100 (2.54)

8–32–NC–3A

Wrench Flat

B

.385 (9.8)

Dia

.005 (0.15)

.168 (4.27)

.750

(19.05)