NTE NTE3322 Datasheet

NTE3322

Insulated Gate Bipolar Transistor

N–Channel Enhancement Mode,

High Speed Switch

Features:

D High Input Impedance
D High Speed
D Low Saturation Voltage
D Enhancement Mode

Applications:

D High Power Switching

Absolute Maximum Raings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, V

Gate–Emitter Voltage, V
Collector Current, I

C

DC 60A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulse (1ms) 120A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Power Dissipation (TC = +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R

Screw Torque 0.8Nm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

GES

CES

stg

C

J

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJC

0.625°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

900V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Gate Leakage Current I
Collector Cutoff Current I
Collector–Emitter Breakdown Voltage V
Gate–Emitter Cutoff Voltage V
Collector–Emitter Saturation Voltage V

Input Capacitance C
Rise Time t
Turn–On Time t
Fall Time t
Turn–Off Time t

(BR)CESIC

GE(off)IC

CE(sat)IC

GES
CES

ies

on

off

VGE = ±25V, VCE = 0 – – ±500 nA
VCE = 900V, VGE = 0 – – 1.0 mA

= 2mA, VGE = 0 900 – – V
= 60mA, VCE = 5V 3.0 – 6.0 V

= 10A, VGE = 15V – – 2.4 V
IC = 60A, VGE = 15V – 2.4 3.7 V
VCE = 10V, VGE = 0, f = 1MHz – 5300 – pF
VCC = 600V

r

f

– 0.25 0.60 µs
– 0.35 0.80 µs
– 0.25 0.40 µs
– 0.50 1.00 µs

C

G

E

.137 (3.5)

Dia Max

.236
(6.0)

.215 (5.45)

.810(20.57)

Max

.098
(2.5)

.204 (5.2)

1.030

(26.16)

.787

(20.0)

.040 (1.0)

.023
(0.6)

GCE

Note: Collector connected to heat sink.