NTE NTE332, NTE331 Datasheet
NTE331 (NPN) & NTE332 (PNP)
Silicon Complementary Transistors
Audio Power Amp, Switch
Description:
The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors
in a TO–220 plastic package intended for use in power linear and switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (IE = 0), V
Collector–Emitter Voltage (I
Emitter–Base Voltage (I
Emitter Current, I
Collector Current, I
Base Current, I
E
C
B
Total Power Dissipation (T
B
= 0), V
C
≤ +25°C), P
C
Operating Junction Temperature, T
Storage Temperature Range, T
CBO
= 0), V
EBO
stg
CEO
D
J
Thermal Resistance Junction–to–Case, R
thJC
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.4°C/W Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Sustaining
Voltage
Collector–Emitter Saturation V
Voltage
(TC = +25°C unless otherwise specified)
CBO
CEO
EBO
V
CEO(sus)IB
CE(sat)
IE = 0, VCB = 100V – – 500 µA
IE = 0, VCB = 100V, TC = +150°C – – 5 mA
IB = 0, VCE = 50V – – 1 mA
IC = 0, VEB = 5V – – 1 mA
= 0, IC = 100mA, Note 1 100 – – V
IC = 5A, IB = 0.5A, Note 1 – – 1 V
IC = 10A, IB = 2.5A, Note 1 – – 3 V
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Base–Emitter Saturation Voltage V
Base–Emitter Voltage V
DC Current Gain h
Transistion Frequency f
BE(sat)IC
BE
FE
T
= 10A, IB = 2.5A, Note 1 – – 2.5 V
IC = 5A, VCE = 4V, Note 1 – – 1.5 V
IC = 0.5A, VCE = 4V, Note 1 40 – 250
IC = 5A, VCE = 4V, Note 1 15 – 150
IC = 10A, VCE = 4V, Note 1 5 – –
IC = 0.5A, VCE = 4V 3 – – MHz
Note 1. Pulsed; Pulse Duration = 300µs, Duty Cycle = 1.5%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.070 (1.78) Max
Base
.100 (2.54)
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab
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