NTE NTE332, NTE331 Datasheet

NTE331 (NPN) & NTE332 (PNP)

Silicon Complementary Transistors

Audio Power Amp, Switch

Description:

The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors
in a TO–220 plastic package intended for use in power linear and switching applications.

Absolute Maximum Ratings:

Collector–Base Voltage (IE = 0), V
Collector–Emitter Voltage (I
Emitter–Base Voltage (I
Emitter Current, I
Collector Current, I
Base Current, I

E

C

B

Total Power Dissipation (T

B

= 0), V

C

≤ +25°C), P

C

Operating Junction Temperature, T
Storage Temperature Range, T

CBO

= 0), V

EBO

stg

CEO

D

J

Thermal Resistance Junction–to–Case, R

thJC

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.4°C/W Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

90W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I

Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Sustaining

Voltage

Collector–Emitter Saturation V

Voltage

(TC = +25°C unless otherwise specified)

CBO

CEO
EBO

V

CEO(sus)IB

CE(sat)

IE = 0, VCB = 100V – – 500 µA
IE = 0, VCB = 100V, TC = +150°C – – 5 mA
IB = 0, VCE = 50V – – 1 mA
IC = 0, VEB = 5V – – 1 mA

= 0, IC = 100mA, Note 1 100 – – V

IC = 5A, IB = 0.5A, Note 1 – – 1 V
IC = 10A, IB = 2.5A, Note 1 – – 3 V

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Base–Emitter Saturation Voltage V
Base–Emitter Voltage V
DC Current Gain h

Transistion Frequency f

BE(sat)IC

BE
FE

T

= 10A, IB = 2.5A, Note 1 – – 2.5 V
IC = 5A, VCE = 4V, Note 1 – – 1.5 V
IC = 0.5A, VCE = 4V, Note 1 40 – 250
IC = 5A, VCE = 4V, Note 1 15 – 150
IC = 10A, VCE = 4V, Note 1 5 – –
IC = 0.5A, VCE = 4V 3 – – MHz

Note 1. Pulsed; Pulse Duration = 300µs, Duty Cycle = 1.5%.

.420 (10.67)

Max

.110 (2.79)

.147 (3.75)

Dia Max

.070 (1.78) Max

Base

.100 (2.54)

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

Emitter
Collector/Tab