NTE NTE3301 Datasheet
NTE3301
Insulated Gate Bipolar Transistor
N–Channel Enhancement Mode,
High Speed Switch
Features:
D High Input Impedance
D Low Saturation Voltage
D Enhancement Mode
D 20V Gate Drive
Applications:
D High Power Switching
D Motor Control
Absolute Maximum Raings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, V
Gate–Emitter Voltage, V
Collector Current, I
C
DC 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse (1ms) 170A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
TA = +25°C 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C 40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Screw Torque 0.6N•m. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GES
CES
C
stg
J
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
3.12°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Gate Leakage Current I
Collector Cutoff Current I
Collector–Emitter Breakdown Voltage V
Gate–Emitter Cutoff Voltage V
Collector–Emitter Saturation Voltage V
Input Capacitance C
Rise Time t
Turn–On Time t
Fall Time t
Turn–Off Time t
(BR)CESIC
GE(off)IC
CE(sat)IC
GES
CES
ies
on
off
VGE = ±25V, VCE = 0 – – ±100 nA
VCE = 400V, VGE = 0 – – 1.0 µA
= 2mA, VGE = 0 400 – – V
= 1mA, VCE = 5V 4.0 5.0 7.0 V
= 170A, VGE = 20V (Pulsed) – 5.0 8.0 V
VCE = 10V, VGE = 0, f = 1MHz – 2000 – pF
VCC = 300V
r
f
– 0.1 0.5 µs
– 0.15 0.50 µs
– 4.0 6.0 µs
– 4.5 7.0 µs
C
G
E
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
.531
(13.5)
Min
GCE
.122 (3.1)
Dia
.165
(4.2)
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54) .059 (1.5) Max
NOTE: Tab is isolated
Loading...