NTE NTE328 Datasheet
NTE328
Silicon NPN Transistor
Power Amp, Switch
Description:
The NTE328 i a silicon NPN transistor in a TO3 type package designed for use in industrial power
amplifier and switching circuit applications.
Features:
D High Collector–Emitter Sustaining Voltage
D High DC Current Gain
D Low Collector–Emitter Saturation Voltage
D Fast Switching Times
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO
CB
EB
Continuous 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 50A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Total Device Dissipation (T
B
= +25°C), P
C
D
Derate Above 25°C 1.14W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.875°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
140V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TC = +25°C unless otherwise specified)
CEO(sus)IC
CEX
I
CEO
I
CBO
EBO
= 50mA, IB = 0, Note 1 120 – – V
VCE = 120V, V
VCE = 120V, V
VCE = 60V, IB = 0 – – 50 µA
VCB = 180V, IE = 0 – – 10 µA
VBE = 6V, IC = 0 – – 100 µA
= 1.5V – – 10 mA
BE(off)
= 1.5V, TC = +150°C – – 1.0 mA
BE(off)
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
Dymanic Characteristics
Current Gain–Bandwidth Product f
Output Capacitance C
Switching Characteristics
Rise Time t
Storage Time t
Fall Time t
CE(sat)IC
BE(sat)IC
BE(on)
FE
T
ob
s
VCE = 2V, IC = 0.5A 50 – –
VCE = 2V, IC = 10A 30 – 120
VCE = 2V, IC = 25A 12 – –
= 10A, IB = 1.0A – – 1.0 V
IC = 25A, IB = 2.5A – – 1.8 V
= 10A, IB = 1.0A – – 1.8 V
IC = 25A, IB = 2.5A – – 2.5 V
VCE = 2V, IC = 10A – – 1.8 V
VCE = 10V, IC = 1A, f = 10MHz, Note 2 40 – – MHz
VCB = 10V, IE = 0, f = 0.1MHz – – 300 pF
VCC = 80V, IC = 10A, IB1 = 1A, V
r
VCC = 80V, IC = 10A, IB1 = IB2 = 1A
f
= 6v – – 0.3 µs
BE(off)
– – 1.0 µs
– – 0.25 µs
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. f
= |hfe| S f
T
test
.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
.040 (1.02).312 (7.93) Min
Emitter
.215 (5.45)
1.187 (30.16)
.665
(16.9)
.430
(10.92)
Seating
Plane
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
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