NTE NTE327 Datasheet
NTE327
Silicon NPN Transistor
Power Amp, Switch
Description:
The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier
and switching circuit applications.
Features:
D High Collector–Emitter Sustaining Voltage
D High DC Current Gain
D Low Collector–Emitter Saturation Voltage
D Fast Switching Times
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO
CB
EB
Continuous 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 50A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Total Device Dissipation (T
B
= +25°C), P
C
D
Derate Above 25°C 1.14W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
J
Maximum Thermal Resistance, Junction–to–Case, R
thJC
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.875°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .
150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TC = +25°C unless otherwise specified)
CEO(sus)IC
CEX
I
CEO
I
CBO
EBO
VCE = 150V, V
VCE = 150V, V
T
VCE = 75V, IB = 0 – – 50 µA
VCB = 180V, IE = 0 – – 50 µA
VBE = 6V, IC = 0 – – 100 µA
= 50mA, IB = 0, Note 1 150 – – V
= 1.5V – – 10 mA
EB(off)
= +150°C
C
EB(off)
= 1.5V,
– – 1.0 mA
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
FE
VCE = 2V, IC = 0.5A 50 – –
VCE = 2V, IC = 10A 30 – 120
VCE = 2V, IC = 25A 12 – –
Collector–Emitter Saturation Voltage V
CE(sat)
IC = 10A, IB = 1.0A – – 1.0 V
IC = 25A, IB = 2.5A – – 1.8 V
Base–Emitter Saturation Voltage V
BE(sat)
IC = 10A, IB = 1.0A – – 1.8 V
IC = 25A, IB = 2.5A – – 2.5 V
Base–Emitter ON Voltage V
BE(on)IC
= 10A, VCE = 2V – – 1.8 V
Dynamic Characteristics
Current Gain–Bandwidth Product f
T
VCE = 10V, IC = 1A, f = 10MHz,
Note 2
Output Capacitance C
ob
VCB = 10V, IE = 0, f = 0.1MHz – – 300 pF
Switching Characteristics
Rise Time t
Storage Time t
Fall Time t
s
VCC = 80V, IC = 10A, IB1 = 1A,
r
V
BE(off)
= 6V
VCC = 80V, IC = 10A, IB1 = IB2 =1A
f
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. f
= |hfe| • f
T
test
.
40 – – MHz
– – 0.3 µ
– – 1.0 µs
– – 0.25 µs
.350 (8.89)
.215 (5.45)
.430
(10.92)
Emitter
.135 (3.45) Max
Base
.875 (22.2)
Dia Max
Seating
Plane
.040 (1.02).312 (7.93) Min
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/Case
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