NTE NTE326 Datasheet

NTE326

Silicon P–Channel JFET Transistor

General Purpose AF Amplifier

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Drain–Gate Voltage, V
Reverse Gate–Source Voltage, V
Forward Gate Current, I
Total Device Dissipation (T

Derate Above 25°C 2.82mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DG

G(f)

= +25°C), P

A

GSR

D

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

310mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Gate–Source Breakdown Voltage V
Gate Reverse Current I

Gate–Source Cutoff Voltage V
Gate–Source Voltage V

ON Characteristics

Zero–Gate–Voltage Drain Current I

Small–Signal Characteristics

Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz 1500 – 5000 µmho
Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz – – 75 µmho
Input Capacitance C
Reverse Transfer Capacitance C

Functional Characteristics

stg

(TA = +25°C unless otherwise specified)

(BR)GSSIG

GSS

GS(off)ID

DSS

GS

iss
rss

J

= 10µA, VDS = 0 40 – – V
VGS = 20V, VDS = 0 – – 5 nA
VGS = 20V, VDS = 0, TA = +100°C – – 1 µA

= 1µA, VDS = 15V 1.0 – 7.5 V
ID = 0.2mA, VDS = 15V 0.8 – 4.5 V

VDS = 15V, VGS = 0, f = 1kHz 2 – 9 mA

VDS = 15V, VGS = 0, f = 1MHz – 5 7 pF
VDS = 15V, VGS = 0, f = 1MHz – 1 2 pF

–65° to +135°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Noise Figure NF VDS = 15V, VGS = 0, RG = 1MΩ,

f = 100Hz, BW = 1Hz

Equivalent Short–Circuit Input Noise

Voltage

e

VDS = 15V, VGS = 0, f = 100Hz,

n

BW = 1Hz

– 1.0 2.5 dB

– 60 115

nV/pHz

.210

(5.33)

Max

.135 (3.45) Min

Seating Plane

.500

(12.7)

Min

.100 (2.54)

.021 (.445) Dia Max

S D G

.050 (1.27)

.165
(4.2)

Max

.105 (2.67) Max

.205 (5.2) Max

.105 (2.67) Max