NTE NTE324 Datasheet
NTE323 (PNP) & NTE324 (NPN)
Silicon Complementary Transistors
General Purpose
Description:
The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a
TO39 type package designed for use as drivers for high power transistors in general purpose amplifier
and switching circuits.
Absolute Maximum Ratings:
Collector–Base Voltage (IE = 0), V
Collector–Emitter Voltage, V
Emitter–Base Voltage (I
Collector Current, I
Base Current, I
C
B
Total Power Dissipation, P
CEO
= 0), V
C
tot
CBO
EBO
TC = +25°C 10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
A
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
J
stg
thJC
Thermal Resistance, Junction–to–Ambient, R
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17.4°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
175°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Sustaining Voltage V
Collector–Emitter Saturation Voltage V
CBO
I
CEO
I
CEV
EBO
CEO(sus)IC
CE(sat)IC
VCB = 120V, IE = 0 – – 1 µA
VCE = 80V, IB = 0 – – 10 µA
VCE = 120V, VBE = –1.5V – – 1 µA
VCE = 120V, VBE = –1.5V, TC = +150°C – – 1 mA
VEB = 4V, IC = 0 – – 1 µA
= 10mA, IB = 0, Note 1 120 – – V
= 250mA, IB = 25mA, Note 1 – – 0.6 V
IC = 500mA, IB = 50mA, Note 1 – – 1.0 V
IC = 1A, IB = 200mA, Note 1 – – 2.0 V
Note 1. Pulse Duration = 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Base–Emitter V oltage V
DC Current Gain h
Transition Frequency f
Collector–Base Capacitance C
Small–Signal Current Gain h
BE
FE
cbo
VCE = 2V, IC = 250mA – – 1.0 V
VCE = 2V, IC = 250mA, Note 1 40 – 150 –
VCE = 2V, IC = 1A, Note 1 5 – – –
VCE = 10V, IC = 100mA, f = 10MHz 30 – – MHz
T
VCB = 20V, IE = 0, f = 1MHz – – 50 pF
VCE = 1.5V, IC = 200mA, f = 1kHz 40 – – –
fe
Note 1. Pulse Duration = 300µs, Duty Cycle ≤ 2%.
.260
(6.6)
Max
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Emitter
.500
(12.7)
Min
.018 (0.45)
Base
Collector/Case
45°
.031 (.793)
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