NTE NTE3222 Datasheet
NTE3222
Optoisolator
NPN Transistor Output
Description:
The NTE3222 is an optically coupled isolator in a 4–Lead DIP type package containing a GaAs light
emitting diode and an NPN silicon phototransistor.
Features:
D High Isolation Voltage
D High Collector–Emitter Voltage
D High Speed Switching
Applications:
D Power Supplies
D Telephone/FAX
D FA/FO Equipment
D Programmable Logic Controller
Absolute Maximum Ratings:
(TA = +25°C unless otherwise specified)
Diode
Reverse Voltage, V
DC Forward Current, I
Power Dissipation (Per Channel) P
R
F
D
80mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 1.5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Current (Note 1), I
FP
Transistor
Collector–Emitter Voltage, V
Emitter–Collector Voltage, V
Collector Current (Per Channel), I
Power Dissipation (Per Channel) P
CEO
ECO
C
C
50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 1.5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device
Isolation Voltage (Note 2), BV 5000V
Operating Ambient Temperature Range, T
Storage Temperature Range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
stg
–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse width = 100µs, duty cycle = 1%.
Note 2. AC voltage for 1 minute at T
= +25°C, RH = 60% between input and output.
A
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
rms
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Diode
Forward Voltage V
Reverse Current I
Terminal capacitance C
IF = 10mA – 1.17 1.40 V
F
VR = 5V – – 5 µA
R
V = 0V, f = 1MHz – 50 – pF
t
Transistor
Collector–Emitter Dark Current I
CEO
VCE = 80V, IF = 0mA – – 100 nA
Coupled
Current Transfer Ratio (IC/IF) CTR IF = 5mA, VCE = 5V 80 300 600 %
Collector Saturation Voltage V
CE(sat)IF
Isolation Resistance R
Isolation Capacitance C
Rise Time t
Fall Time t
Anode
I–O
I–O
r
f
Pin Connection Diagram
1
= 10mA, IC = 2mA – – 0.3 V
V
I–O
= 1kV
DC
10
11
– – Ω
V = 0V, f = 1MHz – 0.5 – pF
VCC = 10V, IC = 2mA, RL = 100Ω
– 3 – µs
– 5 – µs
4
Collector
2Cathode
43
12
.099 (2.5)
.252
(6.4)
.180 (4.58)
.176
(4.47)
Min
3
Emitter
.100 (2.54)
.309
(7.85)
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