NTE NTE3222 Datasheet

NTE3222

Optoisolator

NPN Transistor Output

Description:

The NTE3222 is an optically coupled isolator in a 4–Lead DIP type package containing a GaAs light
emitting diode and an NPN silicon phototransistor.

Features:

D High Isolation Voltage
D High Collector–Emitter Voltage
D High Speed Switching

Applications:

D Power Supplies
D Telephone/FAX
D FA/FO Equipment
D Programmable Logic Controller

Absolute Maximum Ratings:

(TA = +25°C unless otherwise specified)

Diode

Reverse Voltage, V
DC Forward Current, I
Power Dissipation (Per Channel) P

R

F

D

80mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25°C 1.5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Forward Current (Note 1), I

FP

Transistor

Collector–Emitter Voltage, V
Emitter–Collector Voltage, V
Collector Current (Per Channel), I
Power Dissipation (Per Channel) P

CEO
ECO

C

C

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25°C 1.5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device

Isolation Voltage (Note 2), BV 5000V
Operating Ambient Temperature Range, T
Storage Temperature Range, T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A

stg

–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Pulse width = 100µs, duty cycle = 1%.
Note 2. AC voltage for 1 minute at T

= +25°C, RH = 60% between input and output.

A

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

rms

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Diode

Forward Voltage V
Reverse Current I
Terminal capacitance C

IF = 10mA – 1.17 1.40 V

F

VR = 5V – – 5 µA

R

V = 0V, f = 1MHz – 50 – pF

t

Transistor

Collector–Emitter Dark Current I

CEO

VCE = 80V, IF = 0mA – – 100 nA

Coupled

Current Transfer Ratio (IC/IF) CTR IF = 5mA, VCE = 5V 80 300 600 %
Collector Saturation Voltage V

CE(sat)IF

Isolation Resistance R
Isolation Capacitance C
Rise Time t
Fall Time t

Anode

I–O
I–O

r
f

Pin Connection Diagram

1

= 10mA, IC = 2mA – – 0.3 V

V

I–O

= 1kV

DC

10

11

– – Ω

V = 0V, f = 1MHz – 0.5 – pF
VCC = 10V, IC = 2mA, RL = 100Ω

– 3 – µs
– 5 – µs

4

Collector

2Cathode

43

12

.099 (2.5)

.252
(6.4)

.180 (4.58)

.176

(4.47)

Min

3

Emitter

.100 (2.54)

.309

(7.85)