NTE NTE320F, NTE320 Datasheet
NTE320/NTE320F
Silicon NPN RF Power Transistor
40W @ 175MHz
Description:
The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal
amplifier applications required in commercial and industrial equipment operating to 300MHz.
Features:
D Specified 12.5V, 175MHz Characteristics:
Output Power: 40W
Minimum Gain: 4.5dB
Efficiency: 70%
D Available in Two Different Package Styles:
T72 Stud Mount: NTE320
W52K Flange Mount: NTE320F
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
CEO
CBO
EBO
C
= +25°C, Note 1), P
C
D
Derate Above 25°C 460mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stud Torque (NTE320 Only, Note 2) 6.5in. lb.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. These devices are designed for RF operation. The total device dissipation rating applies
only when the devices are operated as RF amplifiers.
Note 2. For repeated assembly, use 5in. lb.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
(BR)CEOIC
(BR)CESIC
(BR)EBOIE
CES
I
CBO
= 100mA, IB = 0 18 – – V
= 20mA, VBE = 0 36 – – V
= 10mA, IC = 0 4 – – V
VCE = 15V, VBE = 0, TC = +55°C – – 10 mA
VCB = 15V, IE = 0 – – 2.5 mA
ON Characteristics
DC Current Gain h
FE
IC = 1A, VCE = 5V 5 – –
Dynamic Characteristics
Output Capacitance C
VCB = 15V, IE = 0, f = 0.1MHz – 170 200 pF
ob
Function Test
Common–Emitter Amplifier Power Gain G
PO = 40W, VCC = 12.5V, f = 175MHz 4.5 – – dB
PE
Collector Efficiency η PO = 40W, VCC = 12.5V, f = 175MHz 70 – – %
175MHz Test Circuit
+12.5Vdc
+
100µF 0.1µF
1000pF
SHIELD
L1C1
RF
Input
C2
C1, C2, C3, C4 5.0 – 80pF ARCO 462 L2 1 Turn, #14 AWG, 3/8” ID, Length Plus Leads = 1.000
L1 Straight Wire, #14 AWG, 1–3/8” Long RFC VK200–20/4B, FERROXCUBE
RFC
DUT
100pF
RFC
L2 C4
100pF
RF
Output
C3
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