NTE NTE319P Datasheet

NTE319P

Silicon NPN Transistor

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VHF Amp

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Total Power Dissipation (T

Derate above +25°C 5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec), T

CEO

CBO

EBO

= +25°C), P

A

stg

T

J

/Forward AGC

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+230°C. . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
DC Current Gain h
Collector Saturation Voltage V
Collector–Emitter Sustaining Voltage V
Current Gain–Bandwidth Product f

Power Gain G
Capacitance C
Noise Figure NF VBE = 2V, f = 45MHz – 2.7 5.0 dB

(TA = +25°C unless otherwise specified)

(BR)CBOIC
(BR)EBOIE

CBO

FE

CE(sat)IC

CEO(sus)IC

T

pe
cb

= 100µA, IE = 0 20 – – V

= 100µA, IC = 0 3 – – V
VCB = 20V, IE = 0 – – 50 nA
IC = 2mA, VCE = 10V 20 80 220

= 10mA, IB = 5mA – – 2.75 V

= 1mA, IB = 0 20 – – V
IC = 2mA, VCE = 10V,

f = 100MHz
VBE = 2V, f = 45MHz 27 29 – dB
IE = 0, VCB = 10V, f = 1MHz – 0.13 0.22 pF

300 – 500 MHz

.210

(5.33)

Max

.135 (3.45) Min

Seating Plane

.500

(12.7)

Min

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

.021 (.445) Dia Max

B E C

.050 (1.27)

.165

(4.2)

Max

.105 (2.67) Max