NTE NTE318 Datasheet
NTE318
Silicon NPN Transistor
RF Power Output
Description:
The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions.
Features:
D Designed for HF military and commercial equipment 40W minimum with greater than 10.0dB gain
D Withstands severe mismatch under operating conditions
D Low inductance Stripline Package
Absolute Maximum Ratings:
Collector Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Maximum Collector Current, I
Total Device Dissipation (+25°C), P
CBO
CEO
EBO
C
T
Thermal Resistance, Junction–to–Case, R
Junction Temperature Range, T
Storage Temperature Range, T
J
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
thJC
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Breakdown V oltage V
Collector–Emitter Breakdown V oltage V
Emitter–Base Breakdown Voltage V
Collector Cut–Off Current I
DC Current Gain h
Gain Bandwidth f
Output Capacitance C
Amplifier Power Out P
Amplifier Power Gain P
(BR)CEOIC
(BR)CESIC
(BR)EBOIE
CBO
Note 1. Pulsed through 25mH Inductor
FE
t
ob
O
= 200mA, IB = 0, Note 1 18 – – V
= 200mA, VBE = 0, Note 1 36 – – V
= 2.5mA, IC = 0 4 – – V
VCB = 15V, IE = 0 – – 1 mA
VCE = 5V, IC = 250mA 10 – –
VCE = 13.5V, IC = 100mA 200 – – MHz
VCB = 12.5V, IC = 0,
–F
= 1.0MHz
O
28MHz/12.5V 47 – – W
g
– – 200 pF
10 – – dB
.250
(6.35)
.725 (18.42)
EC
BE
.127 (3.17) Dia
(2 Holes)
.225 (5.72)
.480 (12.1) Dia
.065 (1.68) .095 (2.42)
.975 (24.77)
1.061 (26.95)
Ceramic Cap
.260
(6.6)
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