NTE NTE317 Datasheet

NTE317

Silicon NPN Transistor

RF Power Output

Description:

The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for H F c ommunica­tions. T his device utilizes i mproved metallization systems to achieve extreme ruggedness under severe
operating conditions.

Features:

D 70W Minimum with Greater than 13.5dB Gain
D Withstands Severe Mismatch under Operating Conditions
D Emitter Ballasted
D Low Inductance Stripline Package

Absolute Maximum Ratings:

Collector Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Maximum Collector Current, I
Total Device Dissipation (+25°C), P

CBO

CEO

EBO

C

T

Thermal Resistance, Junction–to–Case, R
Junction Temperature Range, T
Storage Temperature Range, T

J

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

thJC

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

220W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.8°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Emitter Breakdown V oltage V
Collector–Emitter Breakdown V oltage V
Emitter–Base Breakdown Voltage V
Collector Cut–Off Current I
DC Current Gain h
Gain Bandwidth f
Output Capacitance C

Amplifier Power Out P
Amplifier Power Gain P

(BR)CEOIC
(BR)CESIC
(BR)EBOIE

CBO

Note 1. Pulsed through 25mH Inductor

FE

t

ob

O

= 50mA, IB = 0, Note 1 18 – – V
= 20mA, VBE = 0, Note 1 36 – – V

= 5mA, IC = 0 4 – – V
VCB = 15V, IE = 0 – – 3 mA
VCE = 5V, IC = 5A 10 – –
VCE = 13.5V, IC = 100mA 200 – – MHz
VCB = 12.5V, IC = 0,

–F

= 1.0MHz

O

30MHz/12.5V 70 – – W

g

– 300 – pF

13.5 14.2 – dB

.250

(6.35)

.725 (18.42)

EC

BE

.127 (3.17) Dia
(2 Holes)

.225 (5.72)

.480 (12.1) Dia

.065 (1.68) .095 (2.42)

.975 (24.77)

1.061 (26.95)

Ceramic Cap

.260
(6.6)