NTE NTE316 Datasheet

Silicon NPN Transistor

High Gain, Low Noise Amp

Features:

D High Current Gain–Bandwidth Product
D Low Noise Figure
D High Power Gain

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Continuous Device Dissipation (T

Derate Above 25°C 1.14mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

CBO

EBO

CEO

C

stg

= +25°C), P

A

NTE316

D

15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

ON Characteristics

DC Current Gain h

Dynamic Characteristics

Current Gain–Bandwidth Product f
Collector–Base Capacitance C
Small–Signal Current Gain h
Collector–Base Time Constant rb ’C
Noise Figure NF VCE = 5V, IC = 2mA, RS = 50Ω,

Functional Test

Common–Emitter Amplifier Power Gain G

(TA = +25°C unless otherwise specified)

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO

FE

T
cb
fe

c

pe

= 5mA, IB = 0 15 – – V
= 0.1mA, IE = 0 30 – – V
= 0.1mA, IC = 0 3.5 – – V

VCB = 5V, IE = 0 – – 10 nA

VCE = 5V, IC = 2mA 25 – 250

VCE = 5V, IC = 10mA, f = 100MHz 1400 – – MHz
VCB = 10V, IE = 0, f = 1kHz – 0.8 1.0 pF
VCE = 5V, IC = 2mA, f = 1kHz 25 – 250
VCE = 5V, IE = 2mA, f = 31.8MHz 2 – 12 ps

f = 450MHz

VCE = 5V, IC = 2mA, f = 450MHz 15 – – dB

– – 4.5 dB

.190

(4.82)

.500

(12.7)

Min

.018 (0.45) Dia

.220 (5.58) Dia

.185 (4.7) Dia

.030 (.762)

Emitter

Base

Collector

45°

Case

.040 (1.02)