NTE NTE315 Datasheet

Silicon NPN Transistor,

Medium Power Amp

Features:

D AF – HF Medium Power Amplifier

NTE315

Absolute Maximum Ratings:

Collector–to–Base Voltage, V
Collector–to–Emitter Voltage, V
Emitter–to–Base Voltage, V
Collector Current, I
Base Current. I

C

B

Collector Power Dissipation, P
Junction Temperature, T

J

Storage Temperature Range, T

(TA = +25°C unless otherwise specified)

CBO

CEO

EBO

C

stg

Thermal Resistance, Junction–to–Ambient, R

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
Base to Emitter Voltage V
Collector–Emitter Sustaining Voltage V

(TA = +25°C unless otherwise specified)

CBO
EBO

BE

CEO(sus)IC

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

750mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+120°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–50° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJA

VCB = 25V, IE = 0 – – 0.2 µA
VEB = 6V, IC = 0 – – 0.2 µA
VCE = 6V, IC = 5mA – – 0.7 V

= 2mA 50 – – V

126°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
DC Current Gain h

Small Signal Current Gain |hfe| VCB = 2V, IE = –10mA,

Collector Output Capacitance C

CE(sat)IC
BE(sat)IC

FE1

h

FE2

C

= 1A, IB = 50mA – – 0.3 V

= 1A, IB = 50mA – – 1.0 V
VCE = 2V, IC = 100mA 199 – 649
VCE = 1V, IC = 1A 70 – –

f = 10MH
VCB = 10V, IE = 0, f = 1MH

Z

– 18 – dB

Z

– 16 40 pf

.343

(8.73)

Max

.492

(12.5)

Min

.102 (2.6) Max

.024 (0.62) Max

E C B

.059 (1.5) Typ

.018 (0.48)

.118 (3.0) Max

.236 (6.0)Dia Max

.197 (5.0)

.102 (2.6) Max