NTE NTE315 Datasheet
Silicon NPN Transistor,
Medium Power Amp
Features:
D AF – HF Medium Power Amplifier
NTE315
Absolute Maximum Ratings:
Collector–to–Base Voltage, V
Collector–to–Emitter Voltage, V
Emitter–to–Base Voltage, V
Collector Current, I
Base Current. I
C
B
Collector Power Dissipation, P
Junction Temperature, T
J
Storage Temperature Range, T
(TA = +25°C unless otherwise specified)
CBO
CEO
EBO
C
stg
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
Base to Emitter Voltage V
Collector–Emitter Sustaining Voltage V
(TA = +25°C unless otherwise specified)
CBO
EBO
BE
CEO(sus)IC
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
750mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+120°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–50° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
VCB = 25V, IE = 0 – – 0.2 µA
VEB = 6V, IC = 0 – – 0.2 µA
VCE = 6V, IC = 5mA – – 0.7 V
= 2mA 50 – – V
126°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
DC Current Gain h
Small Signal Current Gain |hfe| VCB = 2V, IE = –10mA,
Collector Output Capacitance C
CE(sat)IC
BE(sat)IC
FE1
h
FE2
C
= 1A, IB = 50mA – – 0.3 V
= 1A, IB = 50mA – – 1.0 V
VCE = 2V, IC = 100mA 199 – 649
VCE = 1V, IC = 1A 70 – –
f = 10MH
VCB = 10V, IE = 0, f = 1MH
Z
– 18 – dB
Z
– 16 40 pf
.343
(8.73)
Max
.492
(12.5)
Min
.102 (2.6) Max
.024 (0.62) Max
E C B
.059 (1.5) Typ
.018 (0.48)
.118 (3.0) Max
.236 (6.0)Dia Max
.197 (5.0)
.102 (2.6) Max
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