NTE NTE314 Datasheet

NTE314

Silicon Controlled Rectifier (SCR)

Power Regulator Switch

Description:

The NTE314 is a silicon controlled rectifier (SCR) in a TO3 type package designed for 12.5 Ampere
RMS, 400 Volt power supply and computer control applications to +100°C maximum junction.

Features:

D Low Forward “ON” Voltage
D All Diffused Junctions for Greater Parameter Uniformity
D Glass Passivated for Greater Stability

Absolute Maximum Ratings:

Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V
RMS Forward Current (T
Peak Forward Surge Current (1/2 Cycle Sine Wave, 60Hz, T
Fusing Current (T

= –40° to +100°C, t = 1 to 8.3ms), I2t 170A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

J

Forward Peak Gate Power, P
Forward Average Gate Power, P
Forward Peak Gate Current, I
Peak Forward Gate Voltage, V
Peak Reverse Gate Voltage, V
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R

= +80°C, All Conduction Angles), I

C

GM

G(AV)

GM

GF
GR

J

stg

thJC

T(RMS)

= –40° to +100°C), I

J

DRM

, V

RRM

TSM

–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400V. . . . . . . . . . . .

12.5A. . . . . . . . . . . . . . . . . . . .

200A. . . . .

5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

19V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.7°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. V

DRM

and V

can b e applied on a c ontinuous D C b asis without incurrent d amage. Ratings

RRM

apply for zero or negative gate voltage. Devices should not be tested for blocking capability
in a manner such that the voltage supplied exceeds the rated blocking voltage.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Peak Forward Blocking Current I

Peak Reverse Blocking Current I

(VD = 400V, TC = +25°C unless otherwise specified)

DRM

RRM

TJ = +100°C – – 3 mA
TJ = +25°C – – 10 µA
TJ = +100°C – – 1.5 mA
TJ = +25°C – – 10 µA

Electrical Characteristics (Cont’d): (VD = 400V, TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Forward “ON” Voltage V
Gate Trigger Current (Continuous DC) I

Gate Trigger Voltage (Continuous DC) V

Holding Current I
Turn–On Time t
Turn–Off Time t

Forward Voltage Application Rate

Exponential

dv/dt TC = +100°C 10 100 – V/µs

TM

GT

GT

gt

ITM = 25A Peak, Note 2 – 1.1 1.8 V
VD = 12V, RL = 24Ω, TJ = +25°C – 7 40 mA
VD = 12V, RL = 24Ω, TJ = –40°C – – 80 mA
VD = 12V, RL = 24Ω, TJ = –40°C – 1 3 V
VD = 12V, RL = 24Ω, TJ = +25°C – 0.68 2 V
VD = 12V, RL = 24Ω, TJ = +100°C 0.3 – – V
VD = 12V, IT = 0.5A – 20 50 mA

H

ITM = 8A, IG = 0.2A, tr = 100ns – 0.5 – µs
ITM = 8A, IG = 0.2A, dv/dt = 20V/µs,

q

di/dt = 30A/µs, T
Pulse Width ≤ 50µs

Note 2. Pulse test: Pulse Width ≤ 1ms, Duty Cycle ≤ 1%.

.135 (3.45) Max

.350 (8.89)

.875 (22.2)

Dia Max

= +80°C,

C

– 20 – µs

Cathode

.215 (5.45)

.430

(10.92)

Seating
Plane

.040 (1.02).312 (7.93) Min

1.187 (30.16)

.665

(16.9)

.156 (3.96) Dia
(2 Holes)

.188 (4.8) R Max

.525 (13.35) R Max

Anode/CaseGate