NTE NTE313 Datasheet
NTE313
Silicon NPN Transistor
High Gain, Low Noise,
VHF Mixer and VHF/RF Amp
Description:
The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier
applications. This device f eatures h igh p ower g ain, l ow n oise, a nd e xcellent f orward A GC c haracteristics.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
Total Power Dissipation, P
Maximum Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
DC Current Gain h
Current–Gain Bandwidth Product f
Output Capacitance C
Noise Figure NF IE = –2mA, f = 200MHz – 2.5 3.3 dB
Power Gain PG IE = –2mA, f = 200MHz 20 23 – dB
AGC Current I
(TA = +25°C unless otherwise specified)
CBO
CEO
T
J
stg
(TA = +25°C unless otherwise specified)
CBO
FE
AGC
VCB = 20V, IE = 0 – – 0.2 µA
VCE = 10V, IC = 2mA 20 60 200
VCE = 10V, IE = –2mA 400 530 – MHz
T
VCB = 10V, IE = 0, f = 1MHz – 0.5 1.0 pF
ob
PG = –30dB – –9 –11 mA
20mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–60° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.157 (4.0)
Base
.079 (2.02) Max
Emitter
Collector
.026 (0.66)
.008 (0.20)
.150 (3.81) Dia Max
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