NTE NTE3123 Datasheet
NTE3123
Phototransistor
Silicon NPN, Intermediate Acceptance,
High Sensitivity, Darlington
Features:
D Epoxy Resin Package
D Compact
D Intermediate Acceptance: ∆q = ±40° Typ
D Visible Light Cut–Off
Applications:
D VCRs
D Optoelectronic Switches
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, V
Emitter–Collector Voltage, V
Collector Current, I
C
Collector Power Disspation, P
Operating Temperature Range, T
Storage Temperature Range, T
Lead Temperature, T
L
During Soldering, 1.4mm from surface of resin edge, 3sec +260°C. . . . . . . . . . . . . . . . . . . . . .
CEO
ECO
C
opr
stg
35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–25° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Current I
Collector Dark Current I
Collector–Emitter Saturation Voltage V
Peak Emission Wavelength λ
Response Time (Rise) t
Response Time (Fall) t
Half Intensity Angle
CBO
CE(sat)IC
∆q
VCE = 2V, Ev = 2ȏx, Note 1 0.2 0.4 0.8 mA
C
VCE = 10V, Ee = 0 – – 10
= 0.8mA, Ee = 1mW/cm2,
Note 1
P
VCE = 2V, IC = 5mA, RL = 100Ω – 400 2000 µs
r
f
– – 1.0 V
– 860 – nm
– 300 1500 µs
– ±40 – deg.
Note 1. Ee, Ev: Illuminance, irradiance by CIE standard light source A (tungsten lamp).
–6
A
.098 (2.5)
Dia
.118 (3.0)
.110 (2.8)
.045 (1.15)
.059
(1.5)
.157
(4.0)
.728
(18.5)
.118
(3.0)
Emitter Collector
.100
(2.54)
1.575
(40.0)
.020 (0.5)
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