NTE NTE3122 Datasheet
NTE3122
Phototransistor
Silicon NPN, Narrow Acceptance,
High Sensitivity, Darlington
Features:
D Epoxy Resin Package
D Narrow Acceptance: ∆q = ±13° Typ
D High Sensitivity: IC = 1.5mA Min @ Ee = 0.1mW/cm
D Visible Light Cut–Off
Applications:
D VCRs, Cassette Tape Recorders
D Floppy Disk Drives
D Optoelectronic Switches
D Automatic Stroboscopes
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, V
Emitter–Collector Voltage, V
Collector Current, I
C
Collector Power Disspation, P
Operating Temperature Range, T
Storage Temperature Range, T
Lead Temperature, T
L
CEO
ECO
C
opr
stg
During Soldering, 1.4mm from bottom face of resin package, 5sec +260°C. . . . . . . . . . . . . . .
2
35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–25° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Current I
Collector Dark Current I
Collector–Emitter Saturation Voltage V
Peak Emission Wavelength λ
Response Time (Rise) t
Response Time (Fall) t
CBO
CE(sat)IC
VCE = 2V, Ee = 0.1mW/cm2,
C
Note 1
VCE = 10V, Ee = 0 – – 10
= 1.5mA, Ee = 1mW/cm2,
Note 1
P
VCE = 2V, IC = 10mA, RL = 100Ω – 80 – µs
r
f
Note 1. Ee: Irradiance by CIE standard light source A (tungsten lamp).
1.5 – 4.0 mA
–6
A
– 0.7 1.0 V
– 860 – nm
– 70 – µs
.118 (3.0)
.116 (2.95)
.085 (2.15)
.059
(1.5)
.157
(4.0)
.728
(18.5)
.118
(3.0)
Emitter Collector
.100
(2.54)
1.575
(40.0)
.020 (0.5)
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