NTE NTE3120 Datasheet

NTE3120

Silicon NPN Phototransistor Detector

Features:

D High Sensitivity
D GaAs LED–Wide Spectral Range, with GaAs LED.
D Low Dark Current
D Side–View Plastic Package

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, V

Emitter–Collector Voltage, V
Collector Current, I

C

Collector Dissipation P
Operating Temperature Range, T
Storage Temperature Range, T

Electro–Optical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

CEO
ECO

C

opr

stg

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–25° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–30° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Dark Current I
Photo Current I
Peak Sensitivity Wavelength λ
Acceptance Half Angle q Note 2 – 35 – deg
Rise Time t
Fall Time t
Collector–Emitter Saturation Voltage V

CEO

CE(L)

CE(sat)ICE(L)

VCE = 10V – 0.01 1.0 µA
VCE = 10V, L = 500 1x, Note 1 1 3 – mA
VCE = 10V – 800 – nm

P

r
f

VCC = 10V, I
RL = 100Ω

= 1mA, L = 1000 1x, Note 1 – 0.2 0.5 V

CE(L)

= 5mA,

– 4 10 µs
– 4 10 µs

Note 1. Source: Tungsten 2856 °K.
Note 2. The angle when the light current is halved.

.177 (4.49) Max

.075 (1.9)

.189
(4.8)
Max

.189
(4.8)

.095 (2.41) .110 (2.79)

.097 (2.46)

EC

.100 (2.54)

Note

.394

(10.0)

Min

.090 (2.28)

.138
(3.5)

.047 (1.19)

.504

(12.8)

Min

EC

.059 (1.5) R

Note: Not Soldered