NTE NTE311 Datasheet

Frequency Multiplier, Driver, VHF/UHF

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collectore–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T

Derate Above 25°C 28.6mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

CEO

CBO

EBO

= +25°C), P

C

NTE311

Silicon NPN Transistor

C

D

stg

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

55V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Emitter Sustaining Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I

ON Characteristics

DC Current Gain h
Collector–Emitter Saturation Voltage V

Small–Signal Characteristics

Current–Gain Bandwidth Product f
Output Capacitance C

Functional Test

(TA = +25°C unless otherwise specified)

CER(sus)IC
CEO(sus)IC
(BR)EBOIF

CEO

I

CEX

EBO

FE

CE(sat)IC

T

obo

VCE = 28V, IB = 0 –– – 0.02 mA
VCE = 30V, VBE = –1.5V, TC = +200°C – – 5.0 mA
VCE = 55V, VBE = –1.5V – – 0.1 mA
VBE = 3.5V, IC = 0 – – 0.1 mA

IC = 50mA, VCE = 5V 25 – 200 –

IC = 50mA, VCE = 15V, f = 200MHz 800 – – MHz
VCB = 28V, IE = 0, f = 1MHz – – 3.0 pF

= 5mA, RBE = 10Ω 55 – – V
= 5mA, IB = 0 30 – – V

= 100µA, IC = 0 3.5 – – V

= 100mA, IB = 20mAQ – – 1.0 V

Amplifier Power Gain G
Collector Efficiency h VCC = 20V, P

pe

VCC = 28V, P

= 1W, f = 400MHz 10 – – dB

OUT

= 1W, f = 400MHz 45 – – %

OUT

.260

(6.6)

Max

.500

(12.7)

Min

.370 (9.39) Dia Max

.355 (9.03) Dia Max

Emitter

.018 (0.45)

Base

Collector/Case

45°

.031 (.793)